Reference Type | Journal (article/letter/editorial) |
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Title | The effects of thermal diffusion of nitrogen gas on silicon nitridation rate |
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Journal | Journal of Materials Science Letters |
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Authors | Kim, Heung | Author |
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Kim, Chong Hee | Author |
Year | 1984 (March) | Volume | 3 |
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Issue | 3 |
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Publisher | Springer Science and Business Media LLC |
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DOI | doi:10.1007/bf00726793Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 16408843 | Long-form Identifier | mindat:1:5:16408843:6 |
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GUID | 0 |
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Full Reference | Kim, Heung, Kim, Chong Hee (1984) The effects of thermal diffusion of nitrogen gas on silicon nitridation rate. Journal of Materials Science Letters, 3 (3) 203-204 doi:10.1007/bf00726793 |
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Plain Text | Kim, Heung, Kim, Chong Hee (1984) The effects of thermal diffusion of nitrogen gas on silicon nitridation rate. Journal of Materials Science Letters, 3 (3) 203-204 doi:10.1007/bf00726793 |
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In | (1984, March) Journal of Materials Science Letters Vol. 3 (3) Springer Science and Business Media LLC |
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