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Kakegawa, Kazuyuki, Mohri, Jun-Ichi (1985) Synthesis of Nb-doped barium titanate semiconductor by a wet-dry combination technique. Journal of Materials Science Letters, 4 (10) 1266-1269 doi:10.1007/bf00723477

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Reference TypeJournal (article/letter/editorial)
TitleSynthesis of Nb-doped barium titanate semiconductor by a wet-dry combination technique
JournalJournal of Materials Science Letters
AuthorsKakegawa, KazuyukiAuthor
Mohri, Jun-IchiAuthor
Year1985 (October)Volume4
Issue10
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00723477Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID16409087Long-form Identifiermindat:1:5:16409087:3
GUID0
Full ReferenceKakegawa, Kazuyuki, Mohri, Jun-Ichi (1985) Synthesis of Nb-doped barium titanate semiconductor by a wet-dry combination technique. Journal of Materials Science Letters, 4 (10) 1266-1269 doi:10.1007/bf00723477
Plain TextKakegawa, Kazuyuki, Mohri, Jun-Ichi (1985) Synthesis of Nb-doped barium titanate semiconductor by a wet-dry combination technique. Journal of Materials Science Letters, 4 (10) 1266-1269 doi:10.1007/bf00723477
In(1985, October) Journal of Materials Science Letters Vol. 4 (10) Springer Science and Business Media LLC


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