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Kagawa, Yutaka (1985) Reaction between reaction-bonded Si3N4 and titanium thin films. Journal of Materials Science Letters, 4 (9) 1062-1066 doi:10.1007/bf00720416

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Reference TypeJournal (article/letter/editorial)
TitleReaction between reaction-bonded Si3N4 and titanium thin films
JournalJournal of Materials Science Letters
AuthorsKagawa, YutakaAuthor
Year1985 (September)Volume4
Issue9
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00720416Search in ResearchGate
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Mindat Ref. ID16409464Long-form Identifiermindat:1:5:16409464:2
GUID0
Full ReferenceKagawa, Yutaka (1985) Reaction between reaction-bonded Si3N4 and titanium thin films. Journal of Materials Science Letters, 4 (9) 1062-1066 doi:10.1007/bf00720416
Plain TextKagawa, Yutaka (1985) Reaction between reaction-bonded Si3N4 and titanium thin films. Journal of Materials Science Letters, 4 (9) 1062-1066 doi:10.1007/bf00720416
In(1985, September) Journal of Materials Science Letters Vol. 4 (9) Springer Science and Business Media LLC

See Also

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Nakata, Ellchi, Sato, Kenji, Kagawa, Yutaka (1984) Exchange diffusion phenomenon between free-silicon in reaction bonded SiC and liquid aluminium. Journal of Materials Science Letters, 3 (7) 611-612 doi:10.1007/bf00719625
Babuji, Bellan, Radhakrishna, S. (1985) Optical properties of titanium oxide thin films. Journal of Materials Science Letters, 4 (6) 767-769 doi:10.1007/bf00726985
Nakata, Eiichi, Kagawa, Yutaka (1985) Damage of carbon fibre by high temperature atmospheric exposure and liquid aluminium. Journal of Materials Science Letters, 4 (1) 61-62 doi:10.1007/bf00719897
Kim, Hueng, Kim, Chong Hee (1985) The influence of the various transport properties of the nitriding atmosphere on the formation of reaction-bonded Si3N4. Journal of Materials Science, 20. 141-148 doi:10.1007/bf00555906
Kim, Heung, Kim, Chong Hee (1985) The influence of the various transport properties of the nitriding atmosphere on the formation of reaction-bonded Si3N4. Journal of Materials Science, 20. 149-156 doi:10.1007/bf00555907
Mangels, John A. (1980) The effect of silicon purity on the strength of reaction-bonded Si3N4. Journal of Materials Science, 15. 2132-2135 doi:10.1007/bf00550647
Hentzell, H.T.G., Psaras, P.A., Tu, K.N. (1985) Interfacial reaction between amorphous silicon and palladium thin films. Materials Letters, 3. 255-260 doi:10.1016/0167-577x(85)90016-3
Williams, R. M., Peters, C. (1982) The effects of additions of ?-Si3N4 grog on the ?/? ratio of slip cast reaction bonded silicon nitride. Journal of Materials Science Letters, 1 (6) 257-259 doi:10.1007/bf00727850
Marino, F., Zhang, B. R., Fornari, B. (1996) Processing and microstructural development of reaction-bonded sintering of a Si3N4/intermetallic composite. Journal of Materials Science, 31. 2447-2455 doi:10.1007/bf01152960
Wills, R. R., Mendiratta, M. G., Petrovic, J. J. (1976) Controlled surface-flaw-initiated fracture in reaction-bonded Si3N4. Journal of Materials Science, 11. 1330-1334 doi:10.1007/bf00545154
XIA, Yong-Feng (2008) Preparation and Dielectric Properties of In~ Situ Reaction Bonded Porous Si3N4 Ceramics. Journal of Inorganic Materials, 23 (4). 705-709 doi:10.3724/sp.j.1077.2008.00705
 
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