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Kumar, Ravinder, Panda, Debiprasad, Das, Debabrata, Chatterjee, Arka, Tongbram, Binita, Saha, Jhuma, Upadhyay, Sourabh, Kumar, Raman, Pal, Samir Kumar, Chakrabarti, Subhananda (2020) Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation. Journal of Luminescence, 223. 117208 doi:10.1016/j.jlumin.2020.117208

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Reference TypeJournal (article/letter/editorial)
TitleRealization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation
JournalJournal of Luminescence
AuthorsKumar, RavinderAuthor
Panda, DebiprasadAuthor
Das, DebabrataAuthor
Chatterjee, ArkaAuthor
Tongbram, BinitaAuthor
Saha, JhumaAuthor
Upadhyay, SourabhAuthor
Kumar, RamanAuthor
Pal, Samir KumarAuthor
Chakrabarti, SubhanandaAuthor
Year2020 (July)Volume223
PublisherElsevier BV
DOIdoi:10.1016/j.jlumin.2020.117208Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID16836412Long-form Identifiermindat:1:5:16836412:3
GUID0
Full ReferenceKumar, Ravinder, Panda, Debiprasad, Das, Debabrata, Chatterjee, Arka, Tongbram, Binita, Saha, Jhuma, Upadhyay, Sourabh, Kumar, Raman, Pal, Samir Kumar, Chakrabarti, Subhananda (2020) Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation. Journal of Luminescence, 223. 117208 doi:10.1016/j.jlumin.2020.117208
Plain TextKumar, Ravinder, Panda, Debiprasad, Das, Debabrata, Chatterjee, Arka, Tongbram, Binita, Saha, Jhuma, Upadhyay, Sourabh, Kumar, Raman, Pal, Samir Kumar, Chakrabarti, Subhananda (2020) Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation. Journal of Luminescence, 223. 117208 doi:10.1016/j.jlumin.2020.117208
In(2020) Journal of Luminescence Vol. 223. Elsevier BV

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