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Ibrahim, Ismail A.M., Lenčéš, Zoltán, Benco, Lubomir, Šajgalík, Pavol (2016) Lanthanide-doped LaSi 3 N 5 based phosphors: Ab initio study of electronic structures, band gaps, and energy level locations. Journal of Luminescence, 172. 83-91 doi:10.1016/j.jlumin.2015.11.033

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Reference TypeJournal (article/letter/editorial)
TitleLanthanide-doped LaSi 3 N 5 based phosphors: Ab initio study of electronic structures, band gaps, and energy level locations
JournalJournal of Luminescence
AuthorsIbrahim, Ismail A.M.Author
Lenčéš, ZoltánAuthor
Benco, LubomirAuthor
Šajgalík, PavolAuthor
Year2016 (April)Volume172
PublisherElsevier BV
DOIdoi:10.1016/j.jlumin.2015.11.033Search in ResearchGate
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Mindat Ref. ID16839903Long-form Identifiermindat:1:5:16839903:3
GUID0
Full ReferenceIbrahim, Ismail A.M., Lenčéš, Zoltán, Benco, Lubomir, Šajgalík, Pavol (2016) Lanthanide-doped LaSi 3 N 5 based phosphors: Ab initio study of electronic structures, band gaps, and energy level locations. Journal of Luminescence, 172. 83-91 doi:10.1016/j.jlumin.2015.11.033
Plain TextIbrahim, Ismail A.M., Lenčéš, Zoltán, Benco, Lubomir, Šajgalík, Pavol (2016) Lanthanide-doped LaSi 3 N 5 based phosphors: Ab initio study of electronic structures, band gaps, and energy level locations. Journal of Luminescence, 172. 83-91 doi:10.1016/j.jlumin.2015.11.033
In(2016) Journal of Luminescence Vol. 172. Elsevier BV

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Ibrahim, Ismail A.M., Lenčéš, Zoltán, Benco, Ľubomír, Hrabalová, Monika, Šajgalík, Pavol (2014) Sm-Doped LaSi3N5: Synthesis, Computed Electronic Structure, and Band Gaps. Journal of the American Ceramic Society, 97 (8). 2546-2551 doi:10.1111/jace.12968
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