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Takeuchi, H., Yanagisawa, J., Tsuruta, S., Yamada, H., Hata, M., Nakayama, M. (2011) Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes. Journal of Luminescence, 131 (3) 531-534 doi:10.1016/j.jlumin.2010.09.022

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Reference TypeJournal (article/letter/editorial)
TitleFrequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes
JournalJournal of Luminescence
AuthorsTakeuchi, H.Author
Yanagisawa, J.Author
Tsuruta, S.Author
Yamada, H.Author
Hata, M.Author
Nakayama, M.Author
Year2011 (March)Volume131
Issue3
PublisherElsevier BV
DOIdoi:10.1016/j.jlumin.2010.09.022Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID16843464Long-form Identifiermindat:1:5:16843464:2
GUID0
Full ReferenceTakeuchi, H., Yanagisawa, J., Tsuruta, S., Yamada, H., Hata, M., Nakayama, M. (2011) Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes. Journal of Luminescence, 131 (3) 531-534 doi:10.1016/j.jlumin.2010.09.022
Plain TextTakeuchi, H., Yanagisawa, J., Tsuruta, S., Yamada, H., Hata, M., Nakayama, M. (2011) Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes. Journal of Luminescence, 131 (3) 531-534 doi:10.1016/j.jlumin.2010.09.022
In(2011, March) Journal of Luminescence Vol. 131 (3) Elsevier BV

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Takeuchi, Hideo, Yanagisawa, Junichi, Tsuruta, Syuuichi, Yamada, Hisashi, Hata, Masahiko, Nakayama, Masaaki (2010) Frequency Shift of Terahertz Electromagnetic Waves Originating from Sub-Picosecond-Range Carrier Transport in Undoped GaAs/n-Type GaAs Epitaxial Layer Structures. Japanese Journal of Applied Physics, 49 (8) 82001 doi:10.1143/jjap.49.082001
Takeuchi, H., Yanagisawa, J., Tsuruta, S., Yamada, H., Hata, M., Nakayama, M. (2011) Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n -type GaAs epitaxial layer structures. physica status solidi (c), 8 (2). 343-345 doi:10.1002/pssc.201000396
Takeuchi, H., Tsuruta, S., Yamada, H., Hata, M., Nakayama, M. (2012) Time Evolution of Terahertz Electromagnetic Waves from Undoped GaAs/n-type GaAs Epitaxial Layer Structures Clarified with Use of a Time-Partitioning Fourier Transform Method. Physics Procedia, 29. 30-35 doi:10.1016/j.phpro.2012.03.687
Tsuruta, Shuichi, Takeuchi, Hideo, Yamada, Hisashi, Hata, Masahiko, Nakayama, Masaaki (2013) Enhancement mechanism of terahertz radiation from coherent longitudinal optical phonons in undoped GaAs/n-type GaAs epitaxial structures. Journal of Applied Physics, 113 (14). 143502pp. doi:10.1063/1.4799060
Takeuchi, Hideo, Yanagisawa, Junichi, Hasegawa, Takayuki, Nakayama, Masaaki (2008) Enhancement of terahertz electromagnetic wave emission from an undoped GaAs∕n-type GaAs epitaxial layer structure. Applied Physics Letters, 93 (8). 81916pp. doi:10.1063/1.2976436
Hasegawa, Takayuki, Takagi, Yoshihiro, Takeuchi, Hideo, Yamada, Hisashi, Hata, Masahiko, Nakayama, Masaaki (2012) Ultrafast optical response originating from carrier-transport processes in undoped GaAs/n-type GaAs epitaxial structures. Applied Physics Letters, 100 (21). 211902pp. doi:10.1063/1.4720157
Takeuchi, Hideo, Yanagisawa, Junichi, Hasegawa, Takayuki, Nakayama, Masaaki (2009) Intense emission of terahertz electromagnetic wave from an undoped GaAs/n-type GaAs epitaxial layer structure. physica status solidi (c), 6 (6). 1513-1516 doi:10.1002/pssc.200881507
Hasegawa, Takayuki, Takagi, Yoshihiro, Takeuchi, Hideo, Yamada, Hisashi, Hata, Masahiko, Nakayama, Masaaki (2013) Characteristics of ultrafast optical responses originating from non-equilibrium carrier transport in undoped GaAs/n-type GaAs epitaxial structures. Journal of Applied Physics, 113 (20). 203506pp. doi:10.1063/1.4807405
Takeuchi, Hideo, Tsuruta, Syuichi, Nakayama, Masaaki (2011) Emission of the terahertz electromagnetic wave from coherent longitudinal optical phonons in a GaAs buffer layer optically masked by a GaSb top epitaxial layer. Applied Physics Letters, 98 (15). 151905pp. doi:10.1063/1.3574541
Takeuchi, Hideo, Yanagisawa, Junichi, Nakayama, Masaaki (2010) Direction reversal of the surface band bending in GaAs-based dilute nitride epitaxial layers investigated by polarity of terahertz electromagnetic waves. Physics Procedia, 3. 1109-1113 doi:10.1016/j.phpro.2010.01.147
Takeuchi, Hideo, Tsuruta, Syuichi, Nakayama, Masaaki (2011) Terahertz spectroscopy of dynamics of coupling between the coherent longitudinal optical phonon and plasmon in the surge current of instantaneously photogenerated carriers flowing through thei-GaAs layer of ani-GaAs/n-GaAs epitaxial structure. Journal of Applied Physics, 110 (1). 13515pp. doi:10.1063/1.3603046
 
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