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Wadayama, T, Arigane, T, Fujine, K, Hatta, A (1998) Real-time photoluminescence and Raman spectral study of porous Si during F2 and H2O exposure. Journal of Luminescence, 78 (2) 111-116 doi:10.1016/s0022-2313(97)00309-8

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Reference TypeJournal (article/letter/editorial)
TitleReal-time photoluminescence and Raman spectral study of porous Si during F2 and H2O exposure
JournalJournal of Luminescence
AuthorsWadayama, TAuthor
Arigane, TAuthor
Fujine, KAuthor
Hatta, AAuthor
Year1998 (March)Volume78
Issue2
PublisherElsevier BV
DOIdoi:10.1016/s0022-2313(97)00309-8Search in ResearchGate
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Mindat Ref. ID16852068Long-form Identifiermindat:1:5:16852068:0
GUID0
Full ReferenceWadayama, T, Arigane, T, Fujine, K, Hatta, A (1998) Real-time photoluminescence and Raman spectral study of porous Si during F2 and H2O exposure. Journal of Luminescence, 78 (2) 111-116 doi:10.1016/s0022-2313(97)00309-8
Plain TextWadayama, T, Arigane, T, Fujine, K, Hatta, A (1998) Real-time photoluminescence and Raman spectral study of porous Si during F2 and H2O exposure. Journal of Luminescence, 78 (2) 111-116 doi:10.1016/s0022-2313(97)00309-8
In(1998, March) Journal of Luminescence Vol. 78 (2) Elsevier BV

See Also

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Wadayama, T., Arigane, T., Hatta, A. (1998) Change in luminescence properties of porous Si by F2 and D2O exposure: In situ photoluminescence, Raman, and Fourier-transform infrared spectral study. Applied Physics Letters, 73 (18). 2570-2572 doi:10.1063/1.122508
Arigane, T., Yoshida, K., Wadayama, T., Hatta, A. (1999) In situ FT-IR and photoluminescence study of porous silicon during exposure to F2, H2O, and D2O. Surface Science, 427. 304-308 doi:10.1016/s0039-6028(99)00294-0
Wadayama, Toshimasa, Arigane, Tsuyoshi, Hujine, Katsuhiko, Hatta, Aritada (1997) Photoluminescence and Raman Spectral Study of Porous Si during F$_{\bf 2}$ Exposure. Japanese Journal of Applied Physics, 36. doi:10.1143/jjap.36.l313
Wadayama, Toshimasa, Arigane, Tuyoshi, Hatta, Aritada (2003) In-situ Photoluminescence, Raman, and IR Spectral Study of Porous Silicon during Exposure to Thermoelectrons/H atoms, /H2O and /O3. MATERIALS TRANSACTIONS, 44 (7). 1394-1399 doi:10.2320/matertrans.44.1394
Wadayama, T., Arigane, T., Hayamizu, K., Shibahara, T., Hino, D., Hatta, A. (2000) Dynamic photoluminescence change of porous Si upon exposure to thermoelectrons/D atoms and D2O. Applied Physics Letters, 76 (14). 1851-1853 doi:10.1063/1.126189
Wadayama, Toshimasa, Arigane, Tuyoshi, Hatta, Aritada (2004) Visible Light Emission from Porous Si Investigated with In-situ Photoluminescence, Raman, and IR Spectroscopies. Journal of the Japan Institute of Metals, 68 (10). 873-879 doi:10.2320/jinstmet.68.873
Shigetomi, S, Ikari, T, Nishimura, H (1998) Temperature dependence of photoluminescence of layer semiconductor p-GaTe. Journal of Luminescence, 78 (2) 117-120 doi:10.1016/s0022-2313(97)00305-0
Wadayama, T., Yamamoto, S., Hatta, A. (1994) In situphotoluminescence spectral study of porous Si in HF aqueous solution. Applied Physics Letters, 65 (13). 1653-1655 doi:10.1063/1.112945
Wadayama, T., Yamamoto, S., Hatta, A. (1995) Response to ‘‘Comment on ‘In situ photoluminescence spectral study of porous Si in HF aqueous solution’ ’’ [Appl. Phys. Lett. 66, 2914 (1995)]. Applied Physics Letters, 66 (21). 2913 doi:10.1063/1.113702
Arigane, Tsuyoshi, Watanabe, Noriyuki, Wadayama, Toshimasa, Hatta, Aritada (1999) Enhancement of the Photoluminescence from Porous Silicon by Anodic Polarization. Materials Transactions, JIM, 40. 182-185 doi:10.2320/matertrans1989.40.182
Kanemitsu, Y, Fukunishi, Y, Kushida, T (2000) Photoluminescence properties of porous a-Si. Journal of Luminescence, 87. 460-462 doi:10.1016/s0022-2313(99)00488-3
 
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