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Elhouichet, H., Moadhen, A., Oueslati, M., Férid, M. (2002) Photoluminescence properties of Tb3+ in porous silicon. Journal of Luminescence, 97 (1) 34-39 doi:10.1016/s0022-2313(01)00420-3

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence properties of Tb3+ in porous silicon
JournalJournal of Luminescence
AuthorsElhouichet, H.Author
Moadhen, A.Author
Oueslati, M.Author
Férid, M.Author
Year2002 (April)Volume97
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-2313(01)00420-3Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID16852148Long-form Identifiermindat:1:5:16852148:9
GUID0
Full ReferenceElhouichet, H., Moadhen, A., Oueslati, M., Férid, M. (2002) Photoluminescence properties of Tb3+ in porous silicon. Journal of Luminescence, 97 (1) 34-39 doi:10.1016/s0022-2313(01)00420-3
Plain TextElhouichet, H., Moadhen, A., Oueslati, M., Férid, M. (2002) Photoluminescence properties of Tb3+ in porous silicon. Journal of Luminescence, 97 (1) 34-39 doi:10.1016/s0022-2313(01)00420-3
In(2002, April) Journal of Luminescence Vol. 97 (1) Elsevier BV

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Moadhen, A, Elhouichet, H, Oueslati, M, Férid, M (2002) Photoluminescence properties of europium-doped porous silicon nanocomposites. Journal of Luminescence, 99 (1) 13-17 doi:10.1016/s0022-2313(02)00322-8
Dabboussi, S., Elhouichet, H., Ajlani, H., Moadhen, A., Oueslati, M., Roger, J.A. (2006) Excitation process and photoluminescence properties of Tb3+ and Eu3+ ions in SnO2 and in SnO2: Porous silicon hosts. Journal of Luminescence, 121 (2) 507-516 doi:10.1016/j.jlumin.2005.12.003
Rahmani, M., Moadhen, A., Zaïbi, M.-A., Elhouichet, H., Oueslati, M. (2008) Photoluminescence enhancement and stabilisation of porous silicon passivated by iron. Journal of Luminescence, 128 (11) 1763-1766 doi:10.1016/j.jlumin.2008.04.003
Elhouichet, H., Moadhen, A., Férid, M., Oueslati, M., Canut, B., Roger, J. A. (2003) High luminescent Eu3 and Tb3 doped SnO2 sol–gel derived films deposited on porous silicon. physica status solidi (a), 197 (2). 350-354 doi:10.1002/pssa.200306523
Moadhen, A, Elhouichet, H, Oueslati, M (2002) Stokes and anti-Stokes photoluminescence of Rhodamine B in porous silicon. Materials Science and Engineering: C, 21. 297-301 doi:10.1016/s0928-4931(02)00084-x
Bouzidi, C., Elhouichet, H., Moadhen, A., Oueslati, M. (2009) Sensitisation of erbium emission by silicon nanocrystals-doped SnO2. Journal of Luminescence, 129 (1) 30-33 doi:10.1016/j.jlumin.2008.07.017
Moadhen, A., Elhouichet, H., Jardin, C., Oueslati, M., Roger, J. A. (2005) Cathodoluminescent properties of tin dioxide sol-gel doped with Tb3+and Eu3+grown in porous silicon. physica status solidi (a), 202 (8). 1508-1512 doi:10.1002/pssa.200461163
Rahmani, M., Moadhen, A., Zaïbi, M.-A., Lusson, A., Elhouichet, H., Oueslati, M. (2009) Electrical performance in iron-passivated porous silicon film. Journal of Alloys and Compounds, 485. 422-426 doi:10.1016/j.jallcom.2009.05.127
Moadhen, A., Elhouichet, H., Nosova, L., Oueslati, M. (2007) Rhodamine B absorbed by anodic porous alumina: Stokes and anti-Stokes luminescence study. Journal of Luminescence, 126 (2) 789-794 doi:10.1016/j.jlumin.2006.11.013
Moadhen, A., Elhouichet, H., Ferid, M., Daoudi, K., Canut, B., Sandu, C. S., Oueslati, M., Roger, J. A. (2003) Photoluminescence and structural analysis of terbium doped porous silicon. physica status solidi (a), 197 (2). 360-364 doi:10.1002/pssa.200306525
El Houichet, H., Oueslati, M., Bessaïs, B., Ezzaouia, H. (1997) Photoluminescence enhancement and degradation in porous silicon: Evidence for nonconventional photoinduced defects. Journal of Luminescence, 71 (1) 77-82 doi:10.1016/s0022-2313(96)00101-9
 
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