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Abrosimov, Nikolay V., Kurlov, Vladimir N., Schewski, Robert, Winkler, Jan (2020) Automated Growth of Si1−xGex Single Crystals with Constant Axial Gradient by Czochralski Technique. Crystal Research and Technology, 55 (2) doi:10.1002/crat.201900097

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Reference TypeJournal (article/letter/editorial)
TitleAutomated Growth of Si1−xGex Single Crystals with Constant Axial Gradient by Czochralski Technique
JournalCrystal Research and Technology
AuthorsAbrosimov, Nikolay V.Author
Kurlov, Vladimir N.Author
Schewski, RobertAuthor
Winkler, JanAuthor
Year2020 (February)Volume55
Issue2
PublisherWiley
DOIdoi:10.1002/crat.201900097Search in ResearchGate
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Mindat Ref. ID16984952Long-form Identifiermindat:1:5:16984952:0
GUID0
Full ReferenceAbrosimov, Nikolay V., Kurlov, Vladimir N., Schewski, Robert, Winkler, Jan (2020) Automated Growth of Si1−xGex Single Crystals with Constant Axial Gradient by Czochralski Technique. Crystal Research and Technology, 55 (2) doi:10.1002/crat.201900097
Plain TextAbrosimov, Nikolay V., Kurlov, Vladimir N., Schewski, Robert, Winkler, Jan (2020) Automated Growth of Si1−xGex Single Crystals with Constant Axial Gradient by Czochralski Technique. Crystal Research and Technology, 55 (2) doi:10.1002/crat.201900097
In(2020, February) Crystal Research & Technology Vol. 55 (2)

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Bader, Kristian, Gille, Peter (2020) Single Crystal Growth of FeGa3 and FeGa3−xGex from High‐Temperature Solution Using the Czochralski Method. Crystal Research and Technology, 55 (2) doi:10.1002/crat.201900067
Abrosimov, N.V., Rossolenko, S.N., Alex, V., Gerhardt, A., Schröder, W. (1996) Single crystal growth of Si1 − xGex by the Czochralski technique. Journal of Crystal Growth, 166 (1). 657-662 doi:10.1016/0022-0248(96)00036-x
Abrosimov, N. V., Riemann, H., Schröder, W., Pohl, H.‐J., Kaliteevski, A. K., Godisov, O. N., Korolyov, V. A., Zhilnikov, A. Ju. (2003) 29Si and 30Si single crystal growth by mini‐Czochralski technique. Crystal Research and Technology, 38 (7) 654-658 doi:10.1002/crat.200310079
Raju, Kalaivanan, Aruchamy, Mythili, Karuppannan, Srinivasan (2020) Single Crystal Growth of N‐Benzyl‐2‐methyl‐4‐nitroaniline by Seeded Czochralski Pulling Technique for NLO and THz Applications. Crystal Research and Technology, 55 (4) doi:10.1002/crat.201900234
Schwabe, Dietrich G. (2020) Spiral Crystal Growth in the Czochralski Process—Revisited, with New Interpretations. Crystal Research and Technology, 55 (2) doi:10.1002/crat.201900073
(2020) Scheelite Crystals: (Crystal Research and Technology 2/2020) Crystal Research and Technology, 55 (2) doi:10.1002/crat.202070012
Smirnova, O.V., Kalaev, V.V., Makarov, Yu.N., Abrosimov, N.V., Riemann, H. (2004) Simulation of heat transfer and melt flow in Czochralski growth of Si1−xGex crystals. Journal of Crystal Growth, 266 (1). 74-80 doi:10.1016/j.jcrysgro.2004.02.032
Subramanian, Aravind N., Kabukcuoglu, Merve P., Richter, Carsten, Juda, Uta, Kernke, Robert, Bärwolf, Florian, Hamann, Elias, Zuber, Marcus, Abrosimov, Nikolay V., Sumathi, R. Radhakrishnan (2025) Growth of Boron-Doped Germanium Single Crystals by the Czochralski Method. Crystal Growth & Design, 25 (4). doi:10.1021/acs.cgd.4c01413
Smirnova, O.V., Kalaev, V.V., Makarov, Yu.N., Abrosimov, N.V., Riemann, H. (2006) Numerical investigation of crucible rotation effect on crystallization rate behavior during Czochralski growth of Si1−xGex crystals. Journal of Crystal Growth, 287 (2). 281-286 doi:10.1016/j.jcrysgro.2005.11.034
Rossolenko, S. N. (2009) Modification of the mass weighing in A3B5 automated Czochralski crystal growth techniques. Crystal Research and Technology, 44 (9) 1005-1008 doi:10.1002/crat.200900394
Rossolenko, S. N., Kurlov, V. N., Asrian, A. A. (2009) Analysis of the profile curves of the menisci for the sapphire tubes growth by EFG (Stepanov) technique. Crystal Research and Technology, 44 (7) 689-700 doi:10.1002/crat.200900067
 
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