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Steiner, Johannes, Arzig, Matthias, Denisov, Alexey, Wellmann, Peter J. (2020) Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results. Crystal Research and Technology, 55 (2) doi:10.1002/crat.201900121

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Reference TypeJournal (article/letter/editorial)
TitleImpact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results
JournalCrystal Research and Technology
AuthorsSteiner, JohannesAuthor
Arzig, MatthiasAuthor
Denisov, AlexeyAuthor
Wellmann, Peter J.Author
Year2020 (February)Volume55
Issue2
PublisherWiley
DOIdoi:10.1002/crat.201900121Search in ResearchGate
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Mindat Ref. ID16984989Long-form Identifiermindat:1:5:16984989:6
GUID0
Full ReferenceSteiner, Johannes, Arzig, Matthias, Denisov, Alexey, Wellmann, Peter J. (2020) Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results. Crystal Research and Technology, 55 (2) doi:10.1002/crat.201900121
Plain TextSteiner, Johannes, Arzig, Matthias, Denisov, Alexey, Wellmann, Peter J. (2020) Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results. Crystal Research and Technology, 55 (2) doi:10.1002/crat.201900121
In(2020, February) Crystal Research & Technology Vol. 55 (2)

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Fahlbusch, Lars, Wellmann, Peter J. (2018) Solution Growth of Silicon Carbide Using the Vertical Bridgman Method. Crystal Research and Technology, 53 (7) doi:10.1002/crat.201800019
Danilewsky, Andreas, Wellmann, Peter, Miller, Wolfram (2020) The 50th Anniversary of the German Association for Crystal Growth, DGKK. Crystal Research and Technology, 55 (2) doi:10.1002/crat.202000009
(2020) Growth Dislocations: The Generation of Growth Dislocations by Inclusions and Growth‐Face Damages: An Experimental Study (Crystal Research and Technology 2/2020) Crystal Research and Technology, 55 (2) doi:10.1002/crat.202070014
Steiner, Johannes, Arzig, Matthias, Hsiao, Ta Ching, Wellmann, Peter J. (2019) Optimization of the SiC Powder Source Size Distribution for the Sublimation Growth of Long Crystals Boules. Materials Science Forum, 963. 42-45 doi:10.4028/www.scientific.net/msf.963.42
Ihle, Jonas, Wellmann, Peter J. (2025) Determination of Thermal Properties of Carbon Materials above 2000 °C for Application in High Temperature Crystal Growth. Crystal Research and Technology, 60 (1). doi:10.1002/crat.202400080
(2020) Silicon Crystal Growth: Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible (Crystal Research and Technology 8/2020) Crystal Research and Technology, 55 (8) doi:10.1002/crat.202070025
Wellmann, Peter, Neubauer, Georg, Fahlbusch, Lars, Salamon, Michael, Uhlmann, Norman (2015) Growth of SiC bulk crystals for application in power electronic devices – process design, 2D and 3D X‐ray in situ visualization and advanced doping page 2–9 by Peter Wellmann et al. Crystal Research and Technology, 50 (1) doi:10.1002/crat.201570001
Arzig, Matthias, Salamon, Michael, Hsiao, Ta Ching, Uhlmann, Norman, Wellmann, Peter J. (2020) Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals. Journal of Crystal Growth, 532. 125436pp. doi:10.1016/j.jcrysgro.2019.125436
Arzig, Matthias, Salamon, Michael, Uhlmann, Norman, Johansen, Bertil A., Wellmann, Peter J. (2018) Growth Conditions and In Situ Computed Tomography Analysis of Facetted Bulk Growth of SiC Boules. Materials Science Forum, 924. 245-248 doi:10.4028/www.scientific.net/msf.924.245
Bader, Kristian, Gille, Peter (2020) Single Crystal Growth of FeGa3 and FeGa3−xGex from High‐Temperature Solution Using the Czochralski Method. Crystal Research and Technology, 55 (2) doi:10.1002/crat.201900067
Neuroth, Gero, Klapper, Helmut (2020) The Generation of Growth Dislocations by Inclusions and Growth‐Face Damages: An Experimental Study. Crystal Research and Technology, 55 (2) doi:10.1002/crat.201900159
 
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