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Minghui, Zhang, Wei, Wang, Genqiang, Chen, Rui, Xie, Feng, Wen, Fang, Lin, Yanfeng, Wang, Pengfei, Zhang, Fei, Wang, Shi, He, Yuesong, Liang, Shuwei, Fan, Kaiyue, Wang, Cui, Yu, Tai, Min, Hongxing, Wang (2024) Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials. Journal of Applied Physics, 135 (12) doi:10.1063/5.0185805

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Reference TypeJournal (article/letter/editorial)
TitlePerformance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials
JournalJournal of Applied Physics
AuthorsMinghui, ZhangAuthor
Wei, WangAuthor
Genqiang, ChenAuthor
Rui, XieAuthor
Feng, WenAuthor
Fang, LinAuthor
Yanfeng, WangAuthor
Pengfei, ZhangAuthor
Fei, WangAuthor
Shi, HeAuthor
Yuesong, LiangAuthor
Shuwei, FanAuthor
Kaiyue, WangAuthor
Cui, YuAuthor
Tai, MinAuthor
Hongxing, WangAuthor
Year2024 (March 28)Volume135
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/5.0185805Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID17236469Long-form Identifiermindat:1:5:17236469:0
GUID0
Full ReferenceMinghui, Zhang, Wei, Wang, Genqiang, Chen, Rui, Xie, Feng, Wen, Fang, Lin, Yanfeng, Wang, Pengfei, Zhang, Fei, Wang, Shi, He, Yuesong, Liang, Shuwei, Fan, Kaiyue, Wang, Cui, Yu, Tai, Min, Hongxing, Wang (2024) Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials. Journal of Applied Physics, 135 (12) doi:10.1063/5.0185805
Plain TextMinghui, Zhang, Wei, Wang, Genqiang, Chen, Rui, Xie, Feng, Wen, Fang, Lin, Yanfeng, Wang, Pengfei, Zhang, Fei, Wang, Shi, He, Yuesong, Liang, Shuwei, Fan, Kaiyue, Wang, Cui, Yu, Tai, Min, Hongxing, Wang (2024) Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials. Journal of Applied Physics, 135 (12) doi:10.1063/5.0185805
In(2024, March) Journal of Applied Physics Vol. 135 (12) AIP Publishing

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