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Lee, Yujin, Seo, Seunggi, Shearer, Alexander B., Werbrouck, Andreas, Kim, Hyungjun, Bent, Stacey F. (2024) HfO2 Area-Selective Atomic Layer Deposition with a Carbon-Free Inhibition Layer. Chemistry of Materials, 36 (9) 4303-4314 doi:10.1021/acs.chemmater.3c03161

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Reference TypeJournal (article/letter/editorial)
TitleHfO2 Area-Selective Atomic Layer Deposition with a Carbon-Free Inhibition Layer
JournalChemistry of Materials
AuthorsLee, YujinAuthor
Seo, SeunggiAuthor
Shearer, Alexander B.Author
Werbrouck, AndreasAuthor
Kim, HyungjunAuthor
Bent, Stacey F.Author
Year2024 (May 14)Volume36
Issue9
PublisherAmerican Chemical Society (ACS)
DOIdoi:10.1021/acs.chemmater.3c03161Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID17388071Long-form Identifiermindat:1:5:17388071:7
GUID0
Full ReferenceLee, Yujin, Seo, Seunggi, Shearer, Alexander B., Werbrouck, Andreas, Kim, Hyungjun, Bent, Stacey F. (2024) HfO2 Area-Selective Atomic Layer Deposition with a Carbon-Free Inhibition Layer. Chemistry of Materials, 36 (9) 4303-4314 doi:10.1021/acs.chemmater.3c03161
Plain TextLee, Yujin, Seo, Seunggi, Shearer, Alexander B., Werbrouck, Andreas, Kim, Hyungjun, Bent, Stacey F. (2024) HfO2 Area-Selective Atomic Layer Deposition with a Carbon-Free Inhibition Layer. Chemistry of Materials, 36 (9) 4303-4314 doi:10.1021/acs.chemmater.3c03161
In(2024, May) Chemistry of Materials Vol. 36 (9) American Chemical Society (ACS)


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