Lee, Yujin, Seo, Seunggi, Shearer, Alexander B., Werbrouck, Andreas, Kim, Hyungjun, Bent, Stacey F. (2024) HfO2 Area-Selective Atomic Layer Deposition with a Carbon-Free Inhibition Layer. Chemistry of Materials, 36 (9) 4303-4314 doi:10.1021/acs.chemmater.3c03161
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | HfO2 Area-Selective Atomic Layer Deposition with a Carbon-Free Inhibition Layer | ||
Journal | Chemistry of Materials | ||
Authors | Lee, Yujin | Author | |
Seo, Seunggi | Author | ||
Shearer, Alexander B. | Author | ||
Werbrouck, Andreas | Author | ||
Kim, Hyungjun | Author | ||
Bent, Stacey F. | Author | ||
Year | 2024 (May 14) | Volume | 36 |
Issue | 9 | ||
Publisher | American Chemical Society (ACS) | ||
DOI | doi:10.1021/acs.chemmater.3c03161Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 17388071 | Long-form Identifier | mindat:1:5:17388071:7 |
GUID | 0 | ||
Full Reference | Lee, Yujin, Seo, Seunggi, Shearer, Alexander B., Werbrouck, Andreas, Kim, Hyungjun, Bent, Stacey F. (2024) HfO2 Area-Selective Atomic Layer Deposition with a Carbon-Free Inhibition Layer. Chemistry of Materials, 36 (9) 4303-4314 doi:10.1021/acs.chemmater.3c03161 | ||
Plain Text | Lee, Yujin, Seo, Seunggi, Shearer, Alexander B., Werbrouck, Andreas, Kim, Hyungjun, Bent, Stacey F. (2024) HfO2 Area-Selective Atomic Layer Deposition with a Carbon-Free Inhibition Layer. Chemistry of Materials, 36 (9) 4303-4314 doi:10.1021/acs.chemmater.3c03161 | ||
In | (2024, May) Chemistry of Materials Vol. 36 (9) American Chemical Society (ACS) |
See Also
These are possibly similar items as determined by title/reference text matching only.