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Olszewski, Wojciech, Majchrzak, Dominika, Grodzicki, Miłosz, Serafińczuk, Jarosław, Gorantla, Sandeep, Pucicki, Damian, Michałowski, Paweł Piotr, Kudrawiec, Robert, Hommel, Detlef (2024) Monocrystalline GaN Diluted with up to 7% Arsenic Grown by MOVPE. Crystal Growth & Design, 24 (10) 4057-4064 doi:10.1021/acs.cgd.3c01486

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Reference TypeJournal (article/letter/editorial)
TitleMonocrystalline GaN Diluted with up to 7% Arsenic Grown by MOVPE
JournalCrystal Growth & Design
AuthorsOlszewski, WojciechAuthor
Majchrzak, DominikaAuthor
Grodzicki, MiłoszAuthor
Serafińczuk, JarosławAuthor
Gorantla, SandeepAuthor
Pucicki, DamianAuthor
Michałowski, Paweł PiotrAuthor
Kudrawiec, RobertAuthor
Hommel, DetlefAuthor
Year2024 (May 15)Volume24
Issue10
PublisherAmerican Chemical Society (ACS)
DOIdoi:10.1021/acs.cgd.3c01486Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID17388078Long-form Identifiermindat:1:5:17388078:6
GUID0
Full ReferenceOlszewski, Wojciech, Majchrzak, Dominika, Grodzicki, Miłosz, Serafińczuk, Jarosław, Gorantla, Sandeep, Pucicki, Damian, Michałowski, Paweł Piotr, Kudrawiec, Robert, Hommel, Detlef (2024) Monocrystalline GaN Diluted with up to 7% Arsenic Grown by MOVPE. Crystal Growth & Design, 24 (10) 4057-4064 doi:10.1021/acs.cgd.3c01486
Plain TextOlszewski, Wojciech, Majchrzak, Dominika, Grodzicki, Miłosz, Serafińczuk, Jarosław, Gorantla, Sandeep, Pucicki, Damian, Michałowski, Paweł Piotr, Kudrawiec, Robert, Hommel, Detlef (2024) Monocrystalline GaN Diluted with up to 7% Arsenic Grown by MOVPE. Crystal Growth & Design, 24 (10) 4057-4064 doi:10.1021/acs.cgd.3c01486
In(2024, May) Crystal Growth & Design Vol. 24 (10) American Chemical Society (ACS)

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