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Aleksandrova, Anna, Golz, Christian, Zhuchenko, Zoriana, Biermann, Klaus, Trampert, Achim, Hanke, Michael, Weidlich, Helmut, Masselink, William Ted, Takagaki, Yukihiko (2024) Improvement of Carrier Mobility in Quantum Wells by the Surface Smoothing of Strain-Relaxed Buffer Layers. Crystal Growth & Design, 24 (10) 4094-4100 doi:10.1021/acs.cgd.4c00043

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Reference TypeJournal (article/letter/editorial)
TitleImprovement of Carrier Mobility in Quantum Wells by the Surface Smoothing of Strain-Relaxed Buffer Layers
JournalCrystal Growth & Design
AuthorsAleksandrova, AnnaAuthor
Golz, ChristianAuthor
Zhuchenko, ZorianaAuthor
Biermann, KlausAuthor
Trampert, AchimAuthor
Hanke, MichaelAuthor
Weidlich, HelmutAuthor
Masselink, William TedAuthor
Takagaki, YukihikoAuthor
Year2024 (May 15)Volume24
Issue10
PublisherAmerican Chemical Society (ACS)
DOIdoi:10.1021/acs.cgd.4c00043Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID17388086Long-form Identifiermindat:1:5:17388086:1
GUID0
Full ReferenceAleksandrova, Anna, Golz, Christian, Zhuchenko, Zoriana, Biermann, Klaus, Trampert, Achim, Hanke, Michael, Weidlich, Helmut, Masselink, William Ted, Takagaki, Yukihiko (2024) Improvement of Carrier Mobility in Quantum Wells by the Surface Smoothing of Strain-Relaxed Buffer Layers. Crystal Growth & Design, 24 (10) 4094-4100 doi:10.1021/acs.cgd.4c00043
Plain TextAleksandrova, Anna, Golz, Christian, Zhuchenko, Zoriana, Biermann, Klaus, Trampert, Achim, Hanke, Michael, Weidlich, Helmut, Masselink, William Ted, Takagaki, Yukihiko (2024) Improvement of Carrier Mobility in Quantum Wells by the Surface Smoothing of Strain-Relaxed Buffer Layers. Crystal Growth & Design, 24 (10) 4094-4100 doi:10.1021/acs.cgd.4c00043
In(2024, May) Crystal Growth & Design Vol. 24 (10) American Chemical Society (ACS)

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Aleksandrova, A.; Paysen, E.; Golz, C.; Biermann, K.; Trampert, A.; Weidlich, H.; Masselink, W. T.; Takagaki, Y. (2025) Improving electron mobility in InAs quantum wells on GaAs by removing bunched surface steps generated in strain relaxation. Applied Physics Letters, 126 (23). doi:10.1063/5.0268057
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