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Hu, Benlin, Zhu, Xiaojian, Chen, Xinxin, Pan, Liang, Peng, Shanshan, Wu, Yuanzhao, Shang, Jie, Liu, Gang, Yan, Qing, Li, Run-Wei (2012) A Multilevel Memory Based on Proton-Doped Polyazomethine with an Excellent Uniformity in Resistive Switching. Journal Of The American Chemical Society, 134 (42) 17408-17411 doi:10.1021/ja307933t

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Reference TypeJournal (article/letter/editorial)
TitleA Multilevel Memory Based on Proton-Doped Polyazomethine with an Excellent Uniformity in Resistive Switching
JournalJournal Of The American Chemical Society
AuthorsHu, BenlinAuthor
Zhu, XiaojianAuthor
Chen, XinxinAuthor
Pan, LiangAuthor
Peng, ShanshanAuthor
Wu, YuanzhaoAuthor
Shang, JieAuthor
Liu, GangAuthor
Yan, QingAuthor
Li, Run-WeiAuthor
Year2012 (October 24)Volume134
Issue42
PublisherAmerican Chemical Society (ACS)
DOIdoi:10.1021/ja307933tSearch in ResearchGate
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Mindat Ref. ID1750688Long-form Identifiermindat:1:5:1750688:9
GUID0
Full ReferenceHu, Benlin, Zhu, Xiaojian, Chen, Xinxin, Pan, Liang, Peng, Shanshan, Wu, Yuanzhao, Shang, Jie, Liu, Gang, Yan, Qing, Li, Run-Wei (2012) A Multilevel Memory Based on Proton-Doped Polyazomethine with an Excellent Uniformity in Resistive Switching. Journal Of The American Chemical Society, 134 (42) 17408-17411 doi:10.1021/ja307933t
Plain TextHu, Benlin, Zhu, Xiaojian, Chen, Xinxin, Pan, Liang, Peng, Shanshan, Wu, Yuanzhao, Shang, Jie, Liu, Gang, Yan, Qing, Li, Run-Wei (2012) A Multilevel Memory Based on Proton-Doped Polyazomethine with an Excellent Uniformity in Resistive Switching. Journal Of The American Chemical Society, 134 (42) 17408-17411 doi:10.1021/ja307933t
In(2012, October) Journal Of The American Chemical Society Vol. 134 (42) American Chemical Society (ACS)

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