Zhu, Xiao-Na, Shen, Lei, Li, Yu-Chun, Lv, Yu-Dong, Shi, Cai-Yu, Huang, Teng, Huang, Zi-Ying, Zhang, David Wei, Lu, Hong-Liang (2025) Large positive VFB shift achieved by a band alignment modulated with insertion of Ga2O3 dipole layer. Applied Physics Letters, 126 (8). doi:10.1063/5.0252518
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Large positive VFB shift achieved by a band alignment modulated with insertion of Ga2O3 dipole layer | ||
| Journal | Applied Physics Letters | ||
| Authors | Zhu, Xiao-Na | Author | |
| Shen, Lei | Author | ||
| Li, Yu-Chun | Author | ||
| Lv, Yu-Dong | Author | ||
| Shi, Cai-Yu | Author | ||
| Huang, Teng | Author | ||
| Huang, Zi-Ying | Author | ||
| Zhang, David Wei | Author | ||
| Lu, Hong-Liang | Author | ||
| Year | 2025 (February 24) | Volume | 126 |
| Issue | 8 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/5.0252518Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 18101064 | Long-form Identifier | mindat:1:5:18101064:9 |
| GUID | 0 | ||
| Full Reference | Zhu, Xiao-Na, Shen, Lei, Li, Yu-Chun, Lv, Yu-Dong, Shi, Cai-Yu, Huang, Teng, Huang, Zi-Ying, Zhang, David Wei, Lu, Hong-Liang (2025) Large positive VFB shift achieved by a band alignment modulated with insertion of Ga2O3 dipole layer. Applied Physics Letters, 126 (8). doi:10.1063/5.0252518 | ||
| Plain Text | Zhu, Xiao-Na, Shen, Lei, Li, Yu-Chun, Lv, Yu-Dong, Shi, Cai-Yu, Huang, Teng, Huang, Zi-Ying, Zhang, David Wei, Lu, Hong-Liang (2025) Large positive VFB shift achieved by a band alignment modulated with insertion of Ga2O3 dipole layer. Applied Physics Letters, 126 (8). doi:10.1063/5.0252518 | ||
| In | (2025, March) Applied Physics Letters Vol. 126 (8). AIP Publishing | ||
References Listed
These are the references the publisher has listed as being connected to the article. Please check the article itself for the full list of references which may differ. Not all references are currently linkable within the Digital Library.
| (2018) Extendable and manufacturable volume-less multi-Vt solution for 7 nm technology node and beyond | |
| Not Yet Imported: - journal-article : 10.1109/TED.2022.3144648 If you would like this item imported into the Digital Library, please contact us quoting Journal ID | |
| (2017) High-k metal gate fundamental learning and multi-Vt options for stacked nanosheet gate-all-around transistor | |
| (2016) Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates | |
| (2021) Dipole-first gate stack as a scalable and thermal budget flexible multi-Vt solution for nanosheet/CFET devices | |
| (2022) Record 7(N)+7(P) multiple VTs demonstration on GAA Si nanosheet n/pFETs using WFM-less direct interfacial La/Al-dipole technique | |
 | |
| Not Yet Imported: - journal-article : 10.1149/MA2009-01/15/725 If you would like this item imported into the Digital Library, please contact us quoting Journal ID | |
| Not Yet Imported: - journal-article : 10.1109/TED.2021.3136493 If you would like this item imported into the Digital Library, please contact us quoting Journal ID | |
| Not Yet Imported: ECS Transactions - journal-article : 10.1149/1.3481591 If you would like this item imported into the Digital Library, please contact us quoting Journal ID | |
| (2007) Dipole moment model explaining nFET Vt tuning utilizing La, Sc, Er, and Sr, doped HfSiON dielectrics , 68 | |
| Not Yet Imported: IEEE Transactions on Electron Devices - journal-article : 10.1109/TED.2023.3246435 If you would like this item imported into the Digital Library, please contact us quoting Journal ID | |
| Not Yet Imported: IEEE Transactions on Electron Devices - journal-article : 10.1109/TED.2022.3152976 If you would like this item imported into the Digital Library, please contact us quoting Journal ID | |
| Iwamoto, Kunihiko, Kamimuta, Yuuichi, Ogawa, Arito, Watanabe, Yukimune, Migita, Shinji, Mizubayashi, Wataru, Morita, Yukinori, Takahashi, Masashi, Ota, Hiroyuki, Nabatame, Toshihide, Toriumi, Akira (2008) Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface. Applied Physics Letters, 92 (13). 132907pp. doi:10.1063/1.2904650 |
| (2007) Comprehensive study of VFB shift in high-k CMOS—Dipole formation, Fermi-level pinning and oxygen vacancy effect , 341 | |
| (2008) Intrinsic correlation between mobility reduction and Vt shift due to interface dipole modulation in HfSiON/SiO2 stack by La or Al addition | |
| |
| (2009) Ti-capping technique as a breakthrough for achieving low threshold voltage, high mobility, and high reliability of pMOSFET with metal gate and high-k dielectrics technologies | |
| (2018) Interface dipole modulation in HfO2/SiO2 MOS stack structures | |
| (2010) The methods to determine flat-band voltage VFB in semiconductor of a MOS structure , 37 | |
| Not Yet Imported: - journal-article : 10.1149/2.0201907jss If you would like this item imported into the Digital Library, please contact us quoting Journal ID | |
| |
| Not Yet Imported: - journal-article : 10.1002/adom.202002160 If you would like this item imported into the Digital Library, please contact us quoting Journal ID | |
| (2024) ACS Appl. Nano Mater. Atomic-layer-deposited Al2O3 layer inserted in SiO2/HfO2 gate-stack-induced positive flat-band shift with dual interface dipoles for advanced logic device 7, 28496 | |
| Zhang, Zhaofu, Qian, Qingkai, Li, Baikui, Chen, Kevin J. (2018) Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment. ACS Applied Materials & Interfaces, 10. 17419-17426 doi:10.1021/acsami.8b01286 |
|
See Also
These are possibly similar items as determined by title/reference text matching only.