Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Nishizawa, Jun-ichi, Kurabayashi, Toru (1988) Growth kinetic study in GaAs molecular layer epitaxy in TMG/AsH3 system. Journal of Crystal Growth, 93 (1). 98-107 doi:10.1016/0022-0248(88)90513-1

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleGrowth kinetic study in GaAs molecular layer epitaxy in TMG/AsH3 system
JournalJournal of Crystal Growth
AuthorsNishizawa, Jun-ichiAuthor
Kurabayashi, ToruAuthor
Year1988Volume93
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(88)90513-1Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2783455Long-form Identifiermindat:1:5:2783455:0
GUID0
Full ReferenceNishizawa, Jun-ichi, Kurabayashi, Toru (1988) Growth kinetic study in GaAs molecular layer epitaxy in TMG/AsH3 system. Journal of Crystal Growth, 93 (1). 98-107 doi:10.1016/0022-0248(88)90513-1
Plain TextNishizawa, Jun-ichi, Kurabayashi, Toru (1988) Growth kinetic study in GaAs molecular layer epitaxy in TMG/AsH3 system. Journal of Crystal Growth, 93 (1). 98-107 doi:10.1016/0022-0248(88)90513-1
In(1988) Journal of Crystal Growth Vol. 93 (1) Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Nishizawa, Jun-ichi, Kurabayashi, Toru, PÅ‚otka, Piotr, Kikuchi, Hideyuki, Hamano, Tomoyuki (2002) Self-limiting growth of GaAs with doping by molecular layer epitaxy using triethyl-gallium and AsH3. Journal of Crystal Growth, 244 (3). 236-242 doi:10.1016/s0022-0248(02)01663-9
Nishizawa, Jun-ichi, Kurabayashi, Toru (1990) On the reaction mechanism of GaAs MOCVD. Journal of Crystal Growth, 99 (1). 525-529 doi:10.1016/0022-0248(90)90576-7
Kurabayashi, T, Kono, K, Kikuchi, H, Nishizawa, J, Esashi, M (2001) Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium (TEG) and AsH3. Journal of Crystal Growth, 229 (1). 152-157 doi:10.1016/s0022-0248(01)01111-3
Nishizawa, Jun-ichi (1991) Molecular layer epitaxy and its fundaments. Journal of Crystal Growth, 115 (1). 12-18 doi:10.1016/0022-0248(91)90707-c
Nishizawa, Jun-Ichi, Terasaki, Takeshi, Shimbo, Masafumi (1972) Layer growth in silicon epitaxy. Journal of Crystal Growth, 13. 297-301 doi:10.1016/0022-0248(72)90173-x
Nishizawa, Jun-ichi, Aoki, Kenji, Suzuki, Sohbe, Kikuchi, Kazuhiko (1990) Molecular layer epitaxy of silicon. Journal of Crystal Growth, 99 (1). 502-505 doi:10.1016/0022-0248(90)90571-2
Oyama, Yutaka, Ohno, Takeo, Suto, Ken, Nishizawa, Jun-ichi (2005) Be doping in molecular layer epitaxy of GaAs. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.136
Mochizuki, K., Ozeki, M., Kodama, K., Ohtsuka, N. (1988) Carbon incorporation in GaAs layer grown by atomic layer epitaxy. Journal of Crystal Growth, 93 (1). 557-561 doi:10.1016/0022-0248(88)90583-0
Nishizawa, J., Kimura, M. (1986) Layer growth in GaAs epitaxy. Journal of Crystal Growth, 74 (2). 331-337 doi:10.1016/0022-0248(86)90122-3
Kurabayashi, T, Kikuchi, H, Hamano, T, Nishizawa, J (2001) Doping method for GaAs molecular-layer epitaxy by adsorption control of impurity precursor. Journal of Crystal Growth, 229 (1). 147-151 doi:10.1016/s0022-0248(01)01125-3
Nishizawa, Jun-Ichi, Kurabayashi, Toru (2003) Development of GaAs Epitaxy from Bulk to Ultrathin Films. Growth for Nanostructure Devices. Russian Physics Journal, 46 (6). 559-567 doi:10.1023/b:rupj.0000008181.25192.37
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 29, 2025 02:26:44
Go to top of page