Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Streubel, K., Scholz, F., Laube, G., Dieter, R.J., Zielinski, E., Keppler, F. (1988) Influence of different growth techniques on the quality of GaInAs-InP quantum well structures grown by adduct-MOVPE. Journal of Crystal Growth, 93 (1). 347-352 doi:10.1016/0022-0248(88)90551-9

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleInfluence of different growth techniques on the quality of GaInAs-InP quantum well structures grown by adduct-MOVPE
JournalJournal of Crystal Growth
AuthorsStreubel, K.Author
Scholz, F.Author
Laube, G.Author
Dieter, R.J.Author
Zielinski, E.Author
Keppler, F.Author
Year1988Volume93
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(88)90551-9Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2783754Long-form Identifiermindat:1:5:2783754:8
GUID0
Full ReferenceStreubel, K., Scholz, F., Laube, G., Dieter, R.J., Zielinski, E., Keppler, F. (1988) Influence of different growth techniques on the quality of GaInAs-InP quantum well structures grown by adduct-MOVPE. Journal of Crystal Growth, 93 (1). 347-352 doi:10.1016/0022-0248(88)90551-9
Plain TextStreubel, K., Scholz, F., Laube, G., Dieter, R.J., Zielinski, E., Keppler, F. (1988) Influence of different growth techniques on the quality of GaInAs-InP quantum well structures grown by adduct-MOVPE. Journal of Crystal Growth, 93 (1). 347-352 doi:10.1016/0022-0248(88)90551-9
In(1988) Journal of Crystal Growth Vol. 93 (1) Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Laube, G., Kohler, U., Weidlein, J., Scholz, F., Streubel, K., Dieter, R.J., Karl, N., Gerdon, M. (1988) Me3In preparation and zone refining of adducts for high quality InP and GaInAs MOVPE. Journal of Crystal Growth, 93 (1). 45-51 doi:10.1016/0022-0248(88)90504-0
Scholz, F., Wiedemann, P., Nerz, U., Benz, K.W., Tränkle, G., Lach, E., Forchel, A., Laube, G., Weidlein, J. (1986) InP, GaInAs and quantum well structures grown by adduct MOVPE. Journal of Crystal Growth, 77 (1). 564-570 doi:10.1016/0022-0248(86)90353-2
Zhongming, Wang, Scholz, F., Schuster, H., Streubel, K. (1989) Photoluminescence microscopy on InP substrates and GaInAs epilayers grown by MOVPE. Journal of Crystal Growth, 97 (3). 560-570 doi:10.1016/0022-0248(89)90553-8
Field, R.J., Scholz, F. (1988) Simulation and growth rate uniformity of MOVPE InP using adducts. Journal of Crystal Growth, 88 (3). 371-378 doi:10.1016/0022-0248(88)90010-3
Scholz, F., Molassioti, A., Moser, M., Notheisen, B., Streubel, K., Hostalek, M., Pohl, L. (1991) Novel liquid precursors for the growth of InP and GaInAs epitaxial layers by MOVPE. Journal of Crystal Growth, 107 (1). 365-369 doi:10.1016/0022-0248(91)90487-p
Engel, M., Bauer, R.K., Bimberg, D., Grützmacher, D., Jürgensen, H. (1988) Interface roughness and charge carrier recombination lifetimes in GaInAs/InP quantum wells grown by LP-MOVPE. Journal of Crystal Growth, 93 (1). 359-364 doi:10.1016/0022-0248(88)90553-2
Nakai, K., Sanada, T., Yamakoshi, S. (1988) Planar selective growth of InP by MOVPE. Journal of Crystal Growth, 93 (1). 248-253 doi:10.1016/0022-0248(88)90535-0
Knauf, J., Schmitz, D., Strauch, G., Jürgensen, H., Heyen, M., Melas, A. (1988) Comparison of ethyldimethylindium (EDMIn) and trimethylindium (TMIn) for GaInAs and InP growth by LP-MOVPE. Journal of Crystal Growth, 93 (1). 34-40 doi:10.1016/0022-0248(88)90502-7
Chidley, E.T.R., Haywood, S.K., Mallard, R.E., Mason, N.J., Nicholas, R.J., Walker, P.J., Warburton, R.J. (1988) GaSb heterostructures grown by MOVPE. Journal of Crystal Growth, 93 (1). 70-78 doi:10.1016/0022-0248(88)90508-8
Benzaquen, M., Walsh, D., Beaudoin, M., Mazuruk, K., Puetz, N. (1988) Evidence for deep centers in n-InP grown by MOVPE. Journal of Crystal Growth, 93 (1). 562-568 doi:10.1016/0022-0248(88)90584-2
Kuech, T.F., Scilla, G.J., Cardone, F. (1988) The influence of hydrocarbons in MOVPE GaAs growth: Improved detection of carbon by secondary ion mass spectroscopy. Journal of Crystal Growth, 93 (1). 550-556 doi:10.1016/0022-0248(88)90582-9
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 29, 2025 10:48:43
Go to top of page