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Grützmacher, D., Meyer, R., Zachau, M., Helgesen, P., Zrenner, A., Wolter, K., Jürgensen, H., Koch, F., Balk, P. (1988) LP-MOCVD growth and characterization of undoped and modulation doped GaInAsP/InP and GaInAs/InP multi quantum wells. Journal of Crystal Growth, 93 (1). 382-388 doi:10.1016/0022-0248(88)90557-x

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Reference TypeJournal (article/letter/editorial)
TitleLP-MOCVD growth and characterization of undoped and modulation doped GaInAsP/InP and GaInAs/InP multi quantum wells
JournalJournal of Crystal Growth
AuthorsGrützmacher, D.Author
Meyer, R.Author
Zachau, M.Author
Helgesen, P.Author
Zrenner, A.Author
Wolter, K.Author
Jürgensen, H.Author
Koch, F.Author
Balk, P.Author
Year1988Volume93
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(88)90557-xSearch in ResearchGate
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Mindat Ref. ID2783805Long-form Identifiermindat:1:5:2783805:1
GUID0
Full ReferenceGrützmacher, D., Meyer, R., Zachau, M., Helgesen, P., Zrenner, A., Wolter, K., Jürgensen, H., Koch, F., Balk, P. (1988) LP-MOCVD growth and characterization of undoped and modulation doped GaInAsP/InP and GaInAs/InP multi quantum wells. Journal of Crystal Growth, 93 (1). 382-388 doi:10.1016/0022-0248(88)90557-x
Plain TextGrützmacher, D., Meyer, R., Zachau, M., Helgesen, P., Zrenner, A., Wolter, K., Jürgensen, H., Koch, F., Balk, P. (1988) LP-MOCVD growth and characterization of undoped and modulation doped GaInAsP/InP and GaInAs/InP multi quantum wells. Journal of Crystal Growth, 93 (1). 382-388 doi:10.1016/0022-0248(88)90557-x
In(1988) Journal of Crystal Growth Vol. 93 (1) Elsevier BV

See Also

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Meyer, R., Grützmacher, D., Jürgensen, H., Balk, P. (1988) Controlled uniform growth of GaInAsP/InP structures for laser application on 2 inch wafers by LP-MOVPE at 20 mbar. Journal of Crystal Growth, 93 (1). 285-291 doi:10.1016/0022-0248(88)90541-6
Engel, M., Bauer, R.K., Bimberg, D., Grützmacher, D., Jürgensen, H. (1988) Interface roughness and charge carrier recombination lifetimes in GaInAs/InP quantum wells grown by LP-MOVPE. Journal of Crystal Growth, 93 (1). 359-364 doi:10.1016/0022-0248(88)90553-2
Hergeth, J., Grützmacher, D., Reinhardt, F., Balk, P. (1991) Effect of growth parameters on the interfacial structure of GaInAs/InP quantum wells. Journal of Crystal Growth, 107 (1). 537-542 doi:10.1016/0022-0248(91)90517-9
Knauf, J., Schmitz, D., Strauch, G., Jürgensen, H., Heyen, M., Melas, A. (1988) Comparison of ethyldimethylindium (EDMIn) and trimethylindium (TMIn) for GaInAs and InP growth by LP-MOVPE. Journal of Crystal Growth, 93 (1). 34-40 doi:10.1016/0022-0248(88)90502-7
Kamei, H., Hayashi, H. (1991) OMVPE growth of GaInAs/InP and GaInAs/GaInAsP quantum wells. Journal of Crystal Growth, 107 (1). 567-572 doi:10.1016/0022-0248(91)90522-7
Camassel, J., Laurenti, J.P., Juillaguet, S., Reinhardt, F., Wolter, K., Kurz, H., Grützmacher, D. (1991) Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence. Journal of Crystal Growth, 107 (1). 543-548 doi:10.1016/0022-0248(91)90518-a
Jürgensen, H., Wachs, H.J., Balk, P. (1986) GaInAs/InP heterostructures with improved homogeneity. Journal of Crystal Growth, 79 (1). 914-919 doi:10.1016/0022-0248(86)90572-5
Grützmacher, D., Wolter, K., Jürgensen, H., Balk, P., Bulle Lieuwma, C. W. T. (1988) Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 52 (11). 872-873 doi:10.1063/1.99258
Grützmacher, D., Meyer, R., Balk, P., Berg, C., Schäpers, T., Lüth, H., Zachau, M., Koch, F. (1989) Properties of the two‐dimensional electron gas in modulation‐doped GaInAs(P)/InP structures grown by low‐pressure metalorganic vapor‐phase epitaxy. Journal of Applied Physics, 66 (2). 697-703 doi:10.1063/1.343540
Dasté, P., Miyake, Y., Cao, M., Miyamoto, Y., Arai, S., Suematsu, Y., Furuya, K. (1988) Fabrication technique for GaInAsP/InP quantum wire structure by LP-MOVPE. Journal of Crystal Growth, 93 (1). 365-369 doi:10.1016/0022-0248(88)90554-4
Veuhoff, E., Baumeister, H., Brandt, O., Treichler, R. (1990) Mg incorporation process during LP-MOVPE of InP, GaInAs and GaInAsP. Journal of Crystal Growth, 105 (1). 353-358 doi:10.1016/0022-0248(90)90385-x
 
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