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Takano, S., Sasaki, T., Yamada, H., Kitamura, M., Mito, I., Suzuki, T. (1988) Improvements in resonance frequency and T0 value by 1.5 μm InGaAs MQW lasers grown by MOVPE. Journal of Crystal Growth, 93 (1). 857-862 doi:10.1016/0022-0248(88)90631-8

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Reference TypeJournal (article/letter/editorial)
TitleImprovements in resonance frequency and T0 value by 1.5 μm InGaAs MQW lasers grown by MOVPE
JournalJournal of Crystal Growth
AuthorsTakano, S.Author
Sasaki, T.Author
Yamada, H.Author
Kitamura, M.Author
Mito, I.Author
Suzuki, T.Author
Year1988Volume93
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(88)90631-8Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2784384Long-form Identifiermindat:1:5:2784384:0
GUID0
Full ReferenceTakano, S., Sasaki, T., Yamada, H., Kitamura, M., Mito, I., Suzuki, T. (1988) Improvements in resonance frequency and T0 value by 1.5 μm InGaAs MQW lasers grown by MOVPE. Journal of Crystal Growth, 93 (1). 857-862 doi:10.1016/0022-0248(88)90631-8
Plain TextTakano, S., Sasaki, T., Yamada, H., Kitamura, M., Mito, I., Suzuki, T. (1988) Improvements in resonance frequency and T0 value by 1.5 μm InGaAs MQW lasers grown by MOVPE. Journal of Crystal Growth, 93 (1). 857-862 doi:10.1016/0022-0248(88)90631-8
In(1988) Journal of Crystal Growth Vol. 93 (1) Elsevier BV

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Sasaki, T., Yamada, H., Takano, S., Kitamura, M., Mito, I., Suzuki, T., Hoshino, H. (1988) Doping optimization in InGaAsP DH lasers and improved characteristics in BH lasers grown by MOVPE. Journal of Crystal Growth, 93 (1). 838-842 doi:10.1016/0022-0248(88)90628-8
Yamada, T., Iga, R., Noguchi, Y., Sugiura, H. (1992) CBE growth of low threshold 1.5 μm InGaAs/InGaAsP MQW lasers. Journal of Crystal Growth, 120 (1). 177-179 doi:10.1016/0022-0248(92)90386-w
Kanda, T., Suemune, I., Yamada, K., Kan, Y., Yamanishi, M. (1988) Thermal stability of nearly lattice-matched ZnSSe/GaAs interface grown by MOVPE. Journal of Crystal Growth, 93 (1). 662-666 doi:10.1016/0022-0248(88)90600-8
Kitamura, M., Takano, S., Sasaki, T., Yamada, H., Mito, I. (1988) High‐power operation in InGaAs separate confinement heterostructure quantum well laser diodes. Applied Physics Letters, 53 (1). 1-3 doi:10.1063/1.100120
Shimoyama, K., Katoh, M., Noguchi, M., Inoue, Y., Gotoh, H., Suzuki, Y., Satoh, T. (1988) Transverse junction buried heterostructure (TJ-BH) laser diode grown by MOVPE. Journal of Crystal Growth, 93 (1). 803-808 doi:10.1016/0022-0248(88)90622-7
Ohori, T., Takechi, M., Suzuki, M., Takikawa, M., Komeno, J. (1988) Uniform and abrupt InGaP/GaAs selectively doped heterostructures grown by MOVPE for HEMT ICs. Journal of Crystal Growth, 93 (1). 905-910 doi:10.1016/0022-0248(88)90638-0
Hata, M., Fukuhara, N., Zempo, Y., Isemura, M., Yako, T., Maeda, T. (1988) Residual impurities in epitaxial layers grown by MOVPE. Journal of Crystal Growth, 93 (1). 543-549 doi:10.1016/0022-0248(88)90581-7
Sakaguchi, H., Suzuki, R., Meguro, T. (1988) Systematic study on Si and Se doping of MOVPE GaAs. Journal of Crystal Growth, 93 (1). 602-606 doi:10.1016/0022-0248(88)90590-8
Nakai, K., Sanada, T., Yamakoshi, S. (1988) Planar selective growth of InP by MOVPE. Journal of Crystal Growth, 93 (1). 248-253 doi:10.1016/0022-0248(88)90535-0
Ougazzaden, A., Ganière, J.-D., Gao, Y., Rao, E.V.K., Sermage, B., Kazmierski, C., Mircea, A. (1991) Low threshold 1.5 μm SCH-MQW lasers by atmospheric pressure MOVPE and direct comparison of low versus atmospheric pressure MOVPE laser growths. Journal of Crystal Growth, 107 (1). 761-766 doi:10.1016/0022-0248(91)90554-i
Thijs, P.J.A., Montie, E.A., van Dongen, T. (1991) Structures for improved 1.5 μm wavelength lasers grown by LP-OMVPE; InGaAs-InP strained-layer quantum wells a good candidate. Journal of Crystal Growth, 107 (1). 731-740 doi:10.1016/0022-0248(91)90550-o
 
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