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Aarik, Jaan, Aidla, Aleks, Mändar, Hugo, Sammelselg, Väino, Uustare, Teet (2000) Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition. Journal of Crystal Growth, 220 (1). 105-113 doi:10.1016/s0022-0248(00)00831-9

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Reference TypeJournal (article/letter/editorial)
TitleTexture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition
JournalJournal of Crystal Growth
AuthorsAarik, JaanAuthor
Aidla, AleksAuthor
Mändar, HugoAuthor
Sammelselg, VäinoAuthor
Uustare, TeetAuthor
Year2000 (November)Volume220
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(00)00831-9Search in ResearchGate
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Mindat Ref. ID2856543Long-form Identifiermindat:1:5:2856543:5
GUID0
Full ReferenceAarik, Jaan, Aidla, Aleks, Mändar, Hugo, Sammelselg, Väino, Uustare, Teet (2000) Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition. Journal of Crystal Growth, 220 (1). 105-113 doi:10.1016/s0022-0248(00)00831-9
Plain TextAarik, Jaan, Aidla, Aleks, Mändar, Hugo, Sammelselg, Väino, Uustare, Teet (2000) Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition. Journal of Crystal Growth, 220 (1). 105-113 doi:10.1016/s0022-0248(00)00831-9
In(2000, November) Journal of Crystal Growth Vol. 220 (1) Elsevier BV

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Aarik, Jaan, Aidla, Aleks, Mändar, Hugo, Sammelselg, Väino (2000) Anomalous effect of temperature on atomic layer deposition of titanium dioxide. Journal of Crystal Growth, 220 (4). 531-537 doi:10.1016/s0022-0248(00)00897-6
Aarik, Jaan, Aidla, Aleks, Uustare, Teet, Sammelselg, Väino (1995) Morphology and structure of TiO2 thin films grown by atomic layer deposition. Journal of Crystal Growth, 148 (3). 268-275 doi:10.1016/0022-0248(94)00874-4
Aarik, Jaan, Aidla, Aleks, Sammelselg, Väino, Uustare, Teet (1997) Effect of growth conditions on formation of TiO2-II thin films in atomic layer deposition process. Journal of Crystal Growth, 181 (3). 259-264 doi:10.1016/s0022-0248(97)00279-0
Aarik, Jaan, Aidla, Aleks, Mändar, Hugo, Uustare, Teet, Kukli, Kaupo, Schuisky, Mikael (2001) Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures. Applied Surface Science, 173. 15-21 doi:10.1016/s0169-4332(00)00859-x
Aarik, Jaan, Aidla, Aleks, Sammelselg, Väino, Siimon, Hele, Uustare, Teet (1996) Control of thin film structure by reactant pressure in atomic layer deposition of TiO2. Journal of Crystal Growth, 169 (3). 496-502 doi:10.1016/s0022-0248(96)00423-x
Aarik, Jaan, Aidla, Aleks, Mändar, Hugo, Uustare, Teet, Schuisky, Mikael, Hårsta, Anders (2002) Atomic layer growth of epitaxial TiO2 thin films from TiCl4 and H2O on α-Al2O3 substrates. Journal of Crystal Growth, 242 (1). 189-198 doi:10.1016/s0022-0248(02)01426-4
Aarik, Jaan, Aidla, Aleks, Uustare, Teet, Kukli, Kaupo, Sammelselg, Väino, Ritala, Mikko, Leskelä, Markku (2002) Atomic layer deposition of TiO2 thin films from TiI4 and H2O. Applied Surface Science, 193. 277-286 doi:10.1016/s0169-4332(02)00497-x
Tarre, Aivar, Aarik, Jaan, Mändar, Hugo, Niilisk, Ahti, Pärna, Rainer, Rammula, Raul, Uustare, Teet, Rosental, Arnold, Sammelselg, Väino (2008) Atomic layer deposition of Cr2O3 thin films: Effect of crystallization on growth and properties. Applied Surface Science, 254. 5149-5156 doi:10.1016/j.apsusc.2008.02.016
Aarik, Jaan, Aidla, Aleks, Kukli, Kaupo, Uustare, Teet (1994) Deposition and etching of tantalum oxide films in atomic layer epitaxy process. Journal of Crystal Growth, 144 (1). 116-119 doi:10.1016/0022-0248(94)90019-1
Aarik, Jaan, Aidla, Aleks, Kikas, Arvo, Käämbre, Tanel, Rammula, Raul, Ritslaid, Peeter, Uustare, Teet, Sammelselg, Väino (2004) Effects of precursors on nucleation in atomic layer deposition of HfO2. Applied Surface Science, 230. 292-300 doi:10.1016/j.apsusc.2004.02.048
Aarik, Jaan, Aidla, Aleks, Kasikov, Aarne, Mändar, Hugo, Rammula, Raul, Sammelselg, Väino (2006) Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films. Applied Surface Science, 252. 5723-5734 doi:10.1016/j.apsusc.2005.07.067
 
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