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Niu, Z.C., Ni, H.Q., Xu, X.H., Xu, Y.Q., He, Z.H., Han, Q., Wu, R.H. (2005) Room temperature 1.25μm emission from high indium content InxGa1−xAs/GaAs quantum wells grown by molecular beam epitaxy. Journal of Crystal Growth, 278 (1). 728-733 doi:10.1016/j.jcrysgro.2004.12.149

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Reference TypeJournal (article/letter/editorial)
TitleRoom temperature 1.25μm emission from high indium content InxGa1−xAs/GaAs quantum wells grown by molecular beam epitaxy
JournalJournal of Crystal Growth
AuthorsNiu, Z.C.Author
Ni, H.Q.Author
Xu, X.H.Author
Xu, Y.Q.Author
He, Z.H.Author
Han, Q.Author
Wu, R.H.Author
Year2005 (May)Volume278
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2004.12.149Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2882015Long-form Identifiermindat:1:5:2882015:6
GUID0
Full ReferenceNiu, Z.C., Ni, H.Q., Xu, X.H., Xu, Y.Q., He, Z.H., Han, Q., Wu, R.H. (2005) Room temperature 1.25μm emission from high indium content InxGa1−xAs/GaAs quantum wells grown by molecular beam epitaxy. Journal of Crystal Growth, 278 (1). 728-733 doi:10.1016/j.jcrysgro.2004.12.149
Plain TextNiu, Z.C., Ni, H.Q., Xu, X.H., Xu, Y.Q., He, Z.H., Han, Q., Wu, R.H. (2005) Room temperature 1.25μm emission from high indium content InxGa1−xAs/GaAs quantum wells grown by molecular beam epitaxy. Journal of Crystal Growth, 278 (1). 728-733 doi:10.1016/j.jcrysgro.2004.12.149
In(2005, May) Journal of Crystal Growth Vol. 278 (1) Elsevier BV

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Niu, Z.C., Xu, X.H., Ni, H.Q., Xu, Y.Q., He, Z.H., Han, Q., Wu, R.H. (2005) Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31μm (InyGa1−yAs/GaAs1−x Sbx)/GaAs bilayer quantum wells. Journal of Crystal Growth, 278 (1). 558-563 doi:10.1016/j.jcrysgro.2004.12.102
Zhao, H., Xu, Y.Q., Ni, H.Q., Zhang, S.Y., Han, Q., Du, Y., Yang, X.H., Wu, R.H., Niu, Z.C. (2007) Application of rapid thermal annealing on 1.3–1.55μm GaInNAs(Sb) lasers grown by molecular beam epitaxy. Journal of Crystal Growth, 301. 979-983 doi:10.1016/j.jcrysgro.2006.11.307
Ni, H.Q., Niu, Z.C., Fang, Z.D., Huang, S.S., Zhang, S.Y., Wu, D.H., Shun, Z., Han, Q., Wu, R.H. (2007) Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3– grown by molecular beam epitaxy. Journal of Crystal Growth, 301. 125-128 doi:10.1016/j.jcrysgro.2006.11.172
Ni, H. Q., Niu, Z. C., Xu, X. H., Xu, Y. Q., Zhang, W., Wei, X., Bian, L. F., He, Z. H., Han, Q., Wu, R. H. (2004) High-indium-content InxGa1−xAs/GaAs quantum wells with emission wavelengths above 1.25 μm at room temperature. Applied Physics Letters, 84 (25). 5100-5102 doi:10.1063/1.1762985
Jiang, De-Sheng, Qu, Yu-Hua, Ni, Hai-Qiao, Wu, Dong-Hai, Xu, Ying-Qiang, Niu, Zhi-Chuan (2006) Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy. Journal of Crystal Growth, 288 (1). 12-17 doi:10.1016/j.jcrysgro.2005.12.016
Wu, Donghai, Niu, Zhichuan, Zhang, Shiyong, Ni, Haiqiao, He, Zhenhong, Sun, Zheng, Han, Qin, Wu, Ronghan (2006) The role of Sb in the molecular beam epitaxy growth of 1.30–1.55μm wavelength GaInNAs/GaAs quantum well with high indium content. Journal of Crystal Growth, 290 (2). 494-497 doi:10.1016/j.jcrysgro.2006.02.002
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Wu, S.D., Wang, W.X., Guo, L.W., Li, Z.H., Shang, X.Z., Liu, F., Huang, Q., Zhou, J.M. (2005) Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy. Journal of Crystal Growth, 278 (1). 548-552 doi:10.1016/j.jcrysgro.2004.12.132
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Wang, X.D, Niu, Z.C, Feng, S.L, Miao, Z.H (2000) 1.35μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition. Journal of Crystal Growth, 220 (1). 16-22 doi:10.1016/s0022-0248(00)00743-0
 
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