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Freitas, Jaime A., Hanser, Drew, da Silva, Antonio F., Koukitu, Akinori (2008) Preface. Journal of Crystal Growth, 310 (17). 3901pp. doi:10.1016/j.jcrysgro.2008.06.044

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Reference TypeJournal (article/letter/editorial)
TitlePreface
JournalJournal of Crystal Growth
AuthorsFreitas, Jaime A.Author
Hanser, DrewAuthor
da Silva, Antonio F.Author
Koukitu, AkinoriAuthor
Year2008 (August)Volume310
Issue17
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2008.06.044Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2891946Long-form Identifiermindat:1:5:2891946:9
GUID0
Full ReferenceFreitas, Jaime A., Hanser, Drew, da Silva, Antonio F., Koukitu, Akinori (2008) Preface. Journal of Crystal Growth, 310 (17). 3901pp. doi:10.1016/j.jcrysgro.2008.06.044
Plain TextFreitas, Jaime A., Hanser, Drew, da Silva, Antonio F., Koukitu, Akinori (2008) Preface. Journal of Crystal Growth, 310 (17). 3901pp. doi:10.1016/j.jcrysgro.2008.06.044
In(2008, August) Journal of Crystal Growth Vol. 310 (17) Elsevier BV

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Freitas, Jaime A., Hanser, Drew, Koukitu, Akinori (2007) Proceedings of the 4th International Workshop on Bulk Nitride Semiconductors IV, October 17–22, 2006, Makino, Shiga, Japan. Journal of Crystal Growth, 305 (2). 303pp. doi:10.1016/j.jcrysgro.2007.04.045
Koukitu, Akinori, Amano, Hiroshi, Fujioka, Hiroshi (2009) Preface. Journal of Crystal Growth, 311 (10). 2759pp. doi:10.1016/j.jcrysgro.2009.04.019
Freitas, Jaime A., Grzegory, Izabella, Ehrentraut, D. (2010) Preface. Journal of Crystal Growth, 312 (18). doi:10.1016/j.jcrysgro.2010.04.034
Freitas, Jaime A., Tuomisto, Filip, Pimputkar, Siddha (2018) PREFACE. Journal of Crystal Growth, 501. 82pp. doi:10.1016/j.jcrysgro.2018.09.014
Freitas, J.A., Gowda, M., Tischler, J.G., Kim, J.-H., Liu, L., Hanser, D. (2008) Semi-insulating GaN substrates for high-frequency device fabrication. Journal of Crystal Growth, 310 (17). 3968-3972 doi:10.1016/j.jcrysgro.2008.06.038
Freitas, Jaime A., Sitar, Zlatko, Kumagai, Yoshinao, Meissener, Elke (2012) Preface. Journal of Crystal Growth, 350 (1). 1pp. doi:10.1016/j.jcrysgro.2011.12.011
Freitas, Jaime A., Meissner, Elke, Paskova, Tania, Miyake, Hideto (2014) Preface. Journal of Crystal Growth, 403. 1-2 doi:10.1016/j.jcrysgro.2014.07.001
Eriguchi, Ken-ichi, Hiratsuka, Takako, Murakami, Hisashi, Kumagai, Yoshinao, Koukitu, Akinori (2008) High-temperature growth of thick AlN layers on sapphire (0001) substrates by solid source halide vapor-phase epitaxy. Journal of Crystal Growth, 310 (17). 4016-4019 doi:10.1016/j.jcrysgro.2008.06.033
Suzuki, Hikari, Togashi, Rie, Murakami, Hisashi, Kumagai, Yoshinao, Koukitu, Akinori (2008) Ab initio calculation for the decomposition process of GaN (0001) and (0001Β―) surfaces. Journal of Crystal Growth, 310 (7). 1632-1636 doi:10.1016/j.jcrysgro.2007.11.167
Freitas, Jaime A., Pasova, Tania, Bockowski, Michal, Fujioka, Hiroshi (2016) Preface: Bulk nitride workshop 2015. Journal of Crystal Growth, 456. 1pp. doi:10.1016/j.jcrysgro.2016.09.034
Murakami, Hisashi, Cho, Hyun-Chol, Kumagai, Yoshinao, Koukitu, Akinori (2008) Improvements in the crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressure. Journal of Crystal Growth, 310 (23). 4954-4958 doi:10.1016/j.jcrysgro.2008.07.068
 
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