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Wellmann, Peter J., Sakwe, Sakwe A., Oehlschläger, Felix, Hoffmann, Veit, Zeimer, Ute, Knauer, Arne (2008) Determination of dislocation density in MOVPE grown GaN layers using KOH defect etching. Journal of Crystal Growth, 310 (5). 955-958 doi:10.1016/j.jcrysgro.2007.11.064

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Reference TypeJournal (article/letter/editorial)
TitleDetermination of dislocation density in MOVPE grown GaN layers using KOH defect etching
JournalJournal of Crystal Growth
AuthorsWellmann, Peter J.Author
Sakwe, Sakwe A.Author
Oehlschläger, FelixAuthor
Hoffmann, VeitAuthor
Zeimer, UteAuthor
Knauer, ArneAuthor
Year2008 (March)Volume310
Issue5
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2007.11.064Search in ResearchGate
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Mindat Ref. ID2893158Long-form Identifiermindat:1:5:2893158:6
GUID0
Full ReferenceWellmann, Peter J., Sakwe, Sakwe A., Oehlschläger, Felix, Hoffmann, Veit, Zeimer, Ute, Knauer, Arne (2008) Determination of dislocation density in MOVPE grown GaN layers using KOH defect etching. Journal of Crystal Growth, 310 (5). 955-958 doi:10.1016/j.jcrysgro.2007.11.064
Plain TextWellmann, Peter J., Sakwe, Sakwe A., Oehlschläger, Felix, Hoffmann, Veit, Zeimer, Ute, Knauer, Arne (2008) Determination of dislocation density in MOVPE grown GaN layers using KOH defect etching. Journal of Crystal Growth, 310 (5). 955-958 doi:10.1016/j.jcrysgro.2007.11.064
In(2008, March) Journal of Crystal Growth Vol. 310 (5) Elsevier BV

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Sakwe, S.A., Müller, R., Wellmann, P.J. (2006) Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC. Journal of Crystal Growth, 289 (2). 520-526 doi:10.1016/j.jcrysgro.2005.11.096
Sakwe, Sakwe Aloysius, Herro, Z.G., Wellmann, Peter J. (2005) Development of a KOH Defect Etching Furnace with Absolute In-Situ Temperature Measurement Capability. Materials Science Forum, 483. 283-286 doi:10.4028/www.scientific.net/msf.483-485.283
Sakwe, S.A., Müller, R., Wellmann, P.J. (2007) Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”. Journal of Crystal Growth, 299 (1). 234pp. doi:10.1016/j.jcrysgro.2006.10.196
Sakwe, Sakwe Aloysius, Jang, Yeon Suk, Wellmann, Peter J. (2007) Defect Etching of Non-Polar and Semi-Polar Faces in SiC. Materials Science Forum, 556. 243-246 doi:10.4028/www.scientific.net/msf.556-557.243
Wagner, Matthias, Mustafa, E., Hahn, S., Syväjärvi, Mikael, Yakimova, Rositza, Jang, S., Sakwe, Sakwe Aloysius, Wellmann, Peter J. (2007) Contactless Electrical Defect Characterization and Topography of a-Plane Grown Epitaxial Layers. Materials Science Forum, 556. 327-330 doi:10.4028/www.scientific.net/msf.556-557.327
Mogilatenko, Anna, Küller, Viola, Knauer, Arne, Jeschke, J., Zeimer, Ute, Weyers, Markus, Tränkle, Günther (2014) Defect analysis in AlGaN layers on AlN templates obtained by epitaxial lateral overgrowth. Journal of Crystal Growth, 402. 222-229 doi:10.1016/j.jcrysgro.2014.06.025
Mogilatenko, A., Knauer, A., Zeimer, U., Netzel, C., Jeschke, J., Unger, R.-S., Hartmann, C., Wollweber, J., Dittmar, A., Juda, U., Weyers, M., Bickermann, M. (2019) Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN. Journal of Crystal Growth, 505. 69-73 doi:10.1016/j.jcrysgro.2018.10.021
Wellmann, Peter J., Hens, Philip, Sakwe, Sakwe Aloysius, Queren, Desirée, Müller, Ralf, Durst, Karsten, Göken, Matthias (2007) Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth. Materials Science Forum, 556. 259-262 doi:10.4028/www.scientific.net/msf.556-557.259
Knauer, A., Krispin, P., Balakrishnan, V.R., Weyers, M. (2004) Defect study of MOVPE-grown InGaP layers on GaAs. Journal of Crystal Growth, 272 (1). 627-632 doi:10.1016/j.jcrysgro.2004.08.062
Sakwe, Sakwe Aloysius, Wellmann, Peter J. (2007) Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals. Materials Science Forum, 556. 263-266 doi:10.4028/www.scientific.net/msf.556-557.263
Kueller, V., Knauer, A., Zeimer, U., Kneissl, M., Weyers, M. (2013) Controlled coalescence of MOVPE grown AlN during lateral overgrowth. Journal of Crystal Growth, 368. 83-86 doi:10.1016/j.jcrysgro.2013.01.028
 
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