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Tourret, J., Gourmala, O., Trassoudaine, A., Andre, Y., Gil, E., Castelluci, D., Cadoret, R. (2008) Low-cost high-quality GaN by one-step growth. Journal of Crystal Growth, 310 (5). 924-929 doi:10.1016/j.jcrysgro.2007.11.091

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Reference TypeJournal (article/letter/editorial)
TitleLow-cost high-quality GaN by one-step growth
JournalJournal of Crystal Growth
AuthorsTourret, J.Author
Gourmala, O.Author
Trassoudaine, A.Author
Andre, Y.Author
Gil, E.Author
Castelluci, D.Author
Cadoret, R.Author
Year2008 (March)Volume310
Issue5
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2007.11.091Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2893166Long-form Identifiermindat:1:5:2893166:5
GUID0
Full ReferenceTourret, J., Gourmala, O., Trassoudaine, A., Andre, Y., Gil, E., Castelluci, D., Cadoret, R. (2008) Low-cost high-quality GaN by one-step growth. Journal of Crystal Growth, 310 (5). 924-929 doi:10.1016/j.jcrysgro.2007.11.091
Plain TextTourret, J., Gourmala, O., Trassoudaine, A., Andre, Y., Gil, E., Castelluci, D., Cadoret, R. (2008) Low-cost high-quality GaN by one-step growth. Journal of Crystal Growth, 310 (5). 924-929 doi:10.1016/j.jcrysgro.2007.11.091
In(2008, March) Journal of Crystal Growth Vol. 310 (5) Elsevier BV

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Tourret, J., Gourmala, O., André, Y., Trassoudaine, A., Gil, E., Castelluci, D., Cadoret, R. (2009) A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE). Journal of Crystal Growth, 311 (6). 1460-1465 doi:10.1016/j.jcrysgro.2009.01.082
Chelda-Gourmala, O., Trassoudaine, A., André, Y., Bouchoule, S., Gil, E., Tourret, J., Castelluci, D., Cadoret, R. (2010) Complete HVPE experimental investigations: Cartography of SAG GaN towards quasi-substrates or nanostructures. Journal of Crystal Growth, 312 (12). 1899-1907 doi:10.1016/j.jcrysgro.2010.02.020
André, Y., Trassoudaine, A., Gil, E., Lekhal, K., Chelda-Gourmala, O., Castelluci, D., Cadoret, R. (2012) Demonstration of crystal–vapor equilibrium leading to growth blockade of GaN during selective area growth. Journal of Crystal Growth, 354 (1). 135-141 doi:10.1016/j.jcrysgro.2012.05.026
Andre, Yamina, Trassoudaine, Agnès, Tourret, Julie, Cadoret, R., Gil, Evelyne, Castelluci, Dominique, Aoude, Ouloum, Disseix, Pierre (2007) Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers. Journal of Crystal Growth, 306 (1). 86-93 doi:10.1016/j.jcrysgro.2006.12.081
Réveret, F., André, Y., Gourmala, O., Leymarie, J., Mihailovic, M., Lagarde, D., Gil, E., Castelluci, D., Trassoudaine, A. (2015) Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy. Journal of Crystal Growth, 421. 27-32 doi:10.1016/j.jcrysgro.2015.03.035
Ramdani, R.M., Gil, E., Andre, Y., Trassoudaine, A., Castelluci, D., Paget, D., Rowe, A.C.H., GĂ©rard, B. (2007) Selective epitaxial growth of GaAs tips for local spin injector applications. Journal of Crystal Growth, 306 (1). 111-116 doi:10.1016/j.jcrysgro.2007.03.024
Trassoudaine, A., Parillaud, O., Goumet, E., Castelluci, D., Gil-Lafon, E., Cadoret, R. (1998) Kinetic study of Si incorporation in InP by the hydride vapour phase epitaxy. Journal of Crystal Growth, 192 (3). 402-409 doi:10.1016/s0022-0248(98)00443-6
Gil-Lafon, E, Napierala, J, Pimpinelli, A, Cadoret, R, Trassoudaine, A, Castelluci, D (2003) Direct condensation modelling for a two-particle growth system: application to GaAs grown by hydride vapour phase epitaxy. Journal of Crystal Growth, 258 (1). 14-25 doi:10.1016/s0022-0248(03)01311-3
Gil, E., André, Y., Ramdani, M.R., Fontaine, C., Trassoudaine, A., Castelluci, D. (2013) Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapor Phase Epitaxy (HVPE). Journal of Crystal Growth, 380. 93-98 doi:10.1016/j.jcrysgro.2013.05.019
Aujol, E., Napierala, J., Trassoudaine, A., Gil-Lafon, E., Cadoret, R. (2001) Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen. Journal of Crystal Growth, 222 (3). 538-548 doi:10.1016/s0022-0248(00)00941-6
Gil-Lafon, E, Napierala, J, Castelluci, D, Pimpinelli, A, Cadoret, R, GĂ©rard, B (2001) Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies. Journal of Crystal Growth, 222 (3). 482-496 doi:10.1016/s0022-0248(00)00961-1
 
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