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Hennig, Ch., Richter, E., Weyers, M., Tränkle, G. (2008) Freestanding 2-in GaN layers using lateral overgrowth with HVPE. Journal of Crystal Growth, 310 (5). 911-915 doi:10.1016/j.jcrysgro.2007.11.102

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Reference TypeJournal (article/letter/editorial)
TitleFreestanding 2-in GaN layers using lateral overgrowth with HVPE
JournalJournal of Crystal Growth
AuthorsHennig, Ch.Author
Richter, E.Author
Weyers, M.Author
Tränkle, G.Author
Year2008 (March)Volume310
Issue5
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2007.11.102Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2893174Long-form Identifiermindat:1:5:2893174:4
GUID0
Full ReferenceHennig, Ch., Richter, E., Weyers, M., Tränkle, G. (2008) Freestanding 2-in GaN layers using lateral overgrowth with HVPE. Journal of Crystal Growth, 310 (5). 911-915 doi:10.1016/j.jcrysgro.2007.11.102
Plain TextHennig, Ch., Richter, E., Weyers, M., Tränkle, G. (2008) Freestanding 2-in GaN layers using lateral overgrowth with HVPE. Journal of Crystal Growth, 310 (5). 911-915 doi:10.1016/j.jcrysgro.2007.11.102
In(2008, March) Journal of Crystal Growth Vol. 310 (5) Elsevier BV

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Hennig, Ch., Richter, E., Weyers, M., Tränkle, G. (2007) Self-separation of thick two inch GaN layers grown by HVPE on sapphire using epitaxial lateral overgrowth with masks containing tungsten. physica status solidi (c), 4 (7). 2638-2641 doi:10.1002/pssc.200674855
Richter, E., Hennig, Ch., Wang, L., Zeimer, U., Weyers, M., Tränkle, G. (2007) Optimization of HVPE growth of freestanding c-plane GaN layers using (100) γ-LiAlO2 substrates. physica status solidi (c), 4 (7). 2277-2280 doi:10.1002/pssc.200674871
Hennig, Ch., Richter, E., Zeimer, U., Weyers, M., Tränkle, G. (2006) Bowing of thick GaN layers grown by HVPE using ELOG. physica status solidi (c), 3 (6). 1466-1470 doi:10.1002/pssc.200565402
Richter, E., Gründer, M., Netzel, C., Weyers, M., Tränkle, G. (2012) Growth of GaN boules via vertical HVPE. Journal of Crystal Growth, 350 (1). 89-92 doi:10.1016/j.jcrysgro.2011.12.030
Richter, E., Hennig, Ch., Zeimer, U., Wang, L., Weyers, M., Tränkle, G. (2006) N-type doping of HVPE-grown GaN using dichlorosilane. physica status solidi (a), 203 (7). 1658-1662 doi:10.1002/pssa.200565420
Richter, E., Hennig, Ch., Kissel, H., Sonia, G., Zeimer, U., Weyers, M. (2005) Growth optimization for thick crack-free GaN layers on sapphire with HVPE. physica status solidi (c), 2 (7). 2099-2103 doi:10.1002/pssc.200461487
Richter, E., Hennig, Ch., Weyers, M., Habel, F., Tsay, J.-D., Liu, W.-Y., Brückner, P., Scholz, F., Makarov, Yu., Segal, A., Kaeppeler, J. (2005) Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE. Journal of Crystal Growth, 277 (1). 6-12 doi:10.1016/j.jcrysgro.2004.12.169
Richter, E., Zeimer, U., Hagedorn, S., Wagner, M., Brunner, F., Weyers, M., Tränkle, G. (2010) Hydride vapor phase epitaxy of GaN boules using high growth rates. Journal of Crystal Growth, 312 (18). 2537-2541 doi:10.1016/j.jcrysgro.2010.04.009
Bougrioua, Z., Gibart, P., Calleja, E., Jahn, U., Trampert, A., Ristic, J., Utrera, M., Nataf, G. (2007) Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns. Journal of Crystal Growth, 309 (2). 113-120 doi:10.1016/j.jcrysgro.2007.09.030
Fleischmann, Simon, Richter, Eberhard, Mogilatenko, Anna, Weyers, Markus, Tränkle, Günther (2019) Influence of quartz on silicon incorporation in HVPE grown AlN. Journal of Crystal Growth, 507. 295-298 doi:10.1016/j.jcrysgro.2018.11.028
Richter, E., Hennig, Ch., Zeimer, U., Weyers, M., Tränkle, G., Reiche, P., Ganschow, S., Uecker, R., Peters, K. (2006) Freestanding two inch c-plane GaN layers grown on (100) γ-lithium aluminium oxide by hydride vapour phase epitaxy. physica status solidi (c), 3 (6). 1439-1443 doi:10.1002/pssc.200565278
 
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