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Black, Kate, Jones, Anthony C., Chalker, Paul R., Gaskell, Jeffrey M., Murray, Robert T., Joyce, Tim B., Rushworth, Simon A. (2008) MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si. Journal of Crystal Growth, 310 (5). 1010-1014 doi:10.1016/j.jcrysgro.2007.11.131

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Reference TypeJournal (article/letter/editorial)
TitleMOCVD of ZnO thin films for potential use as compliant layers for GaN on Si
JournalJournal of Crystal Growth
AuthorsBlack, KateAuthor
Jones, Anthony C.Author
Chalker, Paul R.Author
Gaskell, Jeffrey M.Author
Murray, Robert T.Author
Joyce, Tim B.Author
Rushworth, Simon A.Author
Year2008 (March)Volume310
Issue5
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2007.11.131Search in ResearchGate
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Mindat Ref. ID2893191Long-form Identifiermindat:1:5:2893191:1
GUID0
Full ReferenceBlack, Kate, Jones, Anthony C., Chalker, Paul R., Gaskell, Jeffrey M., Murray, Robert T., Joyce, Tim B., Rushworth, Simon A. (2008) MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si. Journal of Crystal Growth, 310 (5). 1010-1014 doi:10.1016/j.jcrysgro.2007.11.131
Plain TextBlack, Kate, Jones, Anthony C., Chalker, Paul R., Gaskell, Jeffrey M., Murray, Robert T., Joyce, Tim B., Rushworth, Simon A. (2008) MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si. Journal of Crystal Growth, 310 (5). 1010-1014 doi:10.1016/j.jcrysgro.2007.11.131
In(2008, March) Journal of Crystal Growth Vol. 310 (5) Elsevier BV

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Black, Kate, Jones, Antony C., Chalker, Paul R., Gaskell, Jeffrey M., Murrey, Robert T., Joyce, Tim B., Rushworth, Simon A. (2009) Erratum to “MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si” [J. Cryst. Growth 310 (2008) 1010–1014]. Journal of Crystal Growth, 311 (23). 4812pp. doi:10.1016/j.jcrysgro.2009.09.028
Gaskell, Jeffrey M., Jones, Anthony C., Aspinall, Helen C., Przybylak, Szymon, Chalker, Paul R., Black, Kate, Davies, Hywel O., Taechakumput, Pouvanart, Taylor, Stephen, Critchlow, Gary W. (2006) Liquid injection ALD and MOCVD of lanthanum aluminate using a bimetallic alkoxide precursor. Journal of Materials Chemistry, 16. 3854pp. doi:10.1039/b609129f
Gaskell, Jeffrey M., Przybylak, Szymon, Jones, Anthony C., Aspinall, Helen C., Chalker, Paul R., Black, Kate, Potter, Richard J., Taechakumput, Pouvanart, Taylor, Stephen (2007) Deposition of Pr- and Nd-aluminate by Liquid Injection MOCVD and ALD Using Single-Source Heterometallic Alkoxide Precursors. Chemistry of Materials, 19. 4796-4803 doi:10.1021/cm0707556
Black, Kate, Aspinall, Helen C., Jones, Anthony C., Przybylak, Katarzyna, Bacsa, John, Chalker, Paul R., Taylor, Stephen, Zhao, Ce Zhou, Elliott, Simon D., Zydor, Aleksandra, Heys, Peter N. (2008) Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors. Journal of Materials Chemistry, 18. 4561pp. doi:10.1039/b807205a
Auld, John, Houlton, David J., Jones, Anthony C., Rushworth, Simon A., Malik, M. Azad, O'Brien, Paul, Critchlow, Gary W. (1994) Growth of ZnO by MOCVD using alkylzinc alkoxides as single-source precursors. Journal of Materials Chemistry, 4. 1249pp. doi:10.1039/jm9940401249
Longo, M., Salicio, O., Wiemer, C., Fallica, R., Molle, A., Fanciulli, M., Giesen, C., Seitzinger, B., Baumann, P.K., Heuken, M., Rushworth, S. (2008) Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications. Journal of Crystal Growth, 310 (23). 5053-5057 doi:10.1016/j.jcrysgro.2008.07.054
Aspinall, Helen C., Bickley, Jamie F., Gaskell, Jeffrey M., Jones, Anthony C., Labat, Gael, Chalker, Paul R., Williams, Paul A. (2007) Precursors for MOCVD and ALD of Rare Earth Oxides−Complexes of the Early Lanthanides with a Donor-Functionalized Alkoxide Ligand. Inorganic Chemistry, 46 (15) 5852-5860 doi:10.1021/ic061382y
Loo, Yim Fun, Taylor, Stephen, Murray, Robert T., Jones, Anthony C., Chalker, Paul R. (2006) Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films. Journal of Applied Physics, 99 (10). 103704pp. doi:10.1063/1.2198936
Qiao, Liang, Bi, Xiaofang (2008) Domain configuration and phase transition for BaTiO3 thin films on tensile Si substrates. Journal of Crystal Growth, 310 (24). 5327-5330 doi:10.1016/j.jcrysgro.2008.09.170
Huang, T S, Joyce, T B, Murray, R T, Papworth, A J, Chalker, P R (2002) Chemical beam epitaxy of GaN on Si (111) using AlAs buffer layers. Journal of Physics D: Applied Physics, 35. 620-624 doi:10.1088/0022-3727/35/7/309
Wójcik, A., Godlewski, M., Guziewicz, E., Minikayev, R., Paszkowicz, W. (2008) Controlling of preferential growth mode of ZnO thin films grown by atomic layer deposition. Journal of Crystal Growth, 310 (2). 284-289 doi:10.1016/j.jcrysgro.2007.10.010
 
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