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Ougazzaden, A., Rogers, D.J., Hosseini Teherani, F., Moudakir, T., Gautier, S., Aggerstam, T., Ould Saad, S., Martin, J., Djebbour, Z., Durand, O., Garry, G., Lusson, A., McGrouther, D., Chapman, J.N. (2008) Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. Journal of Crystal Growth, 310 (5). 944-947 doi:10.1016/j.jcrysgro.2007.11.137

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates
JournalJournal of Crystal Growth
AuthorsOugazzaden, A.Author
Rogers, D.J.Author
Hosseini Teherani, F.Author
Moudakir, T.Author
Gautier, S.Author
Aggerstam, T.Author
Ould Saad, S.Author
Martin, J.Author
Djebbour, Z.Author
Durand, O.Author
Garry, G.Author
Lusson, A.Author
McGrouther, D.Author
Chapman, J.N.Author
Year2008 (March)Volume310
Issue5
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2007.11.137Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2893207Long-form Identifiermindat:1:5:2893207:1
GUID0
Full ReferenceOugazzaden, A., Rogers, D.J., Hosseini Teherani, F., Moudakir, T., Gautier, S., Aggerstam, T., Ould Saad, S., Martin, J., Djebbour, Z., Durand, O., Garry, G., Lusson, A., McGrouther, D., Chapman, J.N. (2008) Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. Journal of Crystal Growth, 310 (5). 944-947 doi:10.1016/j.jcrysgro.2007.11.137
Plain TextOugazzaden, A., Rogers, D.J., Hosseini Teherani, F., Moudakir, T., Gautier, S., Aggerstam, T., Ould Saad, S., Martin, J., Djebbour, Z., Durand, O., Garry, G., Lusson, A., McGrouther, D., Chapman, J.N. (2008) Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. Journal of Crystal Growth, 310 (5). 944-947 doi:10.1016/j.jcrysgro.2007.11.137
In(2008, March) Journal of Crystal Growth Vol. 310 (5) Elsevier BV

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