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Kirch, Jeremy, Garrod, Toby, Kim, Sangho, Park, Joo H., Shin, Jae C., Mawst, L.J., Kuech, T.F., Song, X., Babcock, S.E., Vurgaftman, Igor, Meyer, Jerry R., Kuan, Tung-Sheng (2010) InAsyP1−y metamorphic buffer layers on InP substrates for mid-IR diode lasers. Journal of Crystal Growth, 312 (8). 1165-1169 doi:10.1016/j.jcrysgro.2009.12.057

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Reference TypeJournal (article/letter/editorial)
TitleInAsyP1−y metamorphic buffer layers on InP substrates for mid-IR diode lasers
JournalJournal of Crystal Growth
AuthorsKirch, JeremyAuthor
Garrod, TobyAuthor
Kim, SanghoAuthor
Park, Joo H.Author
Shin, Jae C.Author
Mawst, L.J.Author
Kuech, T.F.Author
Song, X.Author
Babcock, S.E.Author
Vurgaftman, IgorAuthor
Meyer, Jerry R.Author
Kuan, Tung-ShengAuthor
Year2010 (April)Volume312
Issue8
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2009.12.057Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2898889Long-form Identifiermindat:1:5:2898889:4
GUID0
Full ReferenceKirch, Jeremy, Garrod, Toby, Kim, Sangho, Park, Joo H., Shin, Jae C., Mawst, L.J., Kuech, T.F., Song, X., Babcock, S.E., Vurgaftman, Igor, Meyer, Jerry R., Kuan, Tung-Sheng (2010) InAsyP1−y metamorphic buffer layers on InP substrates for mid-IR diode lasers. Journal of Crystal Growth, 312 (8). 1165-1169 doi:10.1016/j.jcrysgro.2009.12.057
Plain TextKirch, Jeremy, Garrod, Toby, Kim, Sangho, Park, Joo H., Shin, Jae C., Mawst, L.J., Kuech, T.F., Song, X., Babcock, S.E., Vurgaftman, Igor, Meyer, Jerry R., Kuan, Tung-Sheng (2010) InAsyP1−y metamorphic buffer layers on InP substrates for mid-IR diode lasers. Journal of Crystal Growth, 312 (8). 1165-1169 doi:10.1016/j.jcrysgro.2009.12.057
In(2010, April) Journal of Crystal Growth Vol. 312 (8) Elsevier BV

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