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Sasamoto, Kohei, Sugita, Ken-ichi, Hashimoto, Akihiro, Yamamoto, Akio (2011) Platinum-catalyst-assisted metalorganic vapor phase epitaxy of InN. Journal of Crystal Growth, 314 (1). 62-65 doi:10.1016/j.jcrysgro.2010.10.064

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Reference TypeJournal (article/letter/editorial)
TitlePlatinum-catalyst-assisted metalorganic vapor phase epitaxy of InN
JournalJournal of Crystal Growth
AuthorsSasamoto, KoheiAuthor
Sugita, Ken-ichiAuthor
Hashimoto, AkihiroAuthor
Yamamoto, AkioAuthor
Year2011 (January)Volume314
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2010.10.064Search in ResearchGate
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Mindat Ref. ID2899098Long-form Identifiermindat:1:5:2899098:7
GUID0
Full ReferenceSasamoto, Kohei, Sugita, Ken-ichi, Hashimoto, Akihiro, Yamamoto, Akio (2011) Platinum-catalyst-assisted metalorganic vapor phase epitaxy of InN. Journal of Crystal Growth, 314 (1). 62-65 doi:10.1016/j.jcrysgro.2010.10.064
Plain TextSasamoto, Kohei, Sugita, Ken-ichi, Hashimoto, Akihiro, Yamamoto, Akio (2011) Platinum-catalyst-assisted metalorganic vapor phase epitaxy of InN. Journal of Crystal Growth, 314 (1). 62-65 doi:10.1016/j.jcrysgro.2010.10.064
In(2011, January) Journal of Crystal Growth Vol. 314 (1) Elsevier BV

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Yamamoto, Akio, Sugita, Ken-ichi, Hashimoto, Akihiro (2009) Elucidation of factors obstructing quality improvement of MOVPE-grown InN. Journal of Crystal Growth, 311 (22). 4636-4640 doi:10.1016/j.jcrysgro.2009.08.027
Bhuiyan, Ashraful Ghani, Tanaka, Tatsuya, Kasashima, Ken, Hashimoto, Akihiro, Yamamoto, Akio (2003) Growth and Characterization of Epitaxial InN Films on Sapphire Substrate using an ArF Excimer Laser-Assisted Metalorganic Vapor-Phase Epitaxy (LA-MOVPE) Japanese Journal of Applied Physics, 42. 7284-7289 doi:10.1143/jjap.42.7284
Murakami, Hisashi, Eriguchi, Ken-ichi, Torii, Jun-ichi, Cho, Hyun-Chol, Kumagai, Yoshinao, Koukitu, Akinori (2008) Influence of hydrogen input partial pressure on the polarity of InN on GaAs (111)A grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 310 (7). 1602-1606 doi:10.1016/j.jcrysgro.2007.11.103
Yamamoto, Akio, Tsujino, Mitsunori, Ohkubo, Mitsugu, Hashimoto, Akihiro (1994) Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth of InN on Si and α-Al2O3 substrates. Journal of Crystal Growth, 137 (3). 415-420 doi:10.1016/0022-0248(94)90979-2
Sugita, K., Tanaka, M., Sasamoto, K., Bhuiyan, A.G., Hashimoto, A., Yamamoto, A. (2011) MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content. Journal of Crystal Growth, 318 (1). 505-508 doi:10.1016/j.jcrysgro.2010.12.025
Misaki, Takao, Wakahara, Akihiro, Okada, Hiroshi, Yoshida, Akira (2004) Epitaxial growth and characterization of ZnGeN2 by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 260 (1). 125-129 doi:10.1016/j.jcrysgro.2003.08.011
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Sasamoto, K., Hotta, T., Sugita, K., Bhuiyan, A.G., Hashimoto, A., Yamamoto, A., Kinoshita, K., Kohji, Y. (2011) MOVPE growth of high quality p-type InGaN with intermediate In compositions. Journal of Crystal Growth, 318 (1). 492-495 doi:10.1016/j.jcrysgro.2010.10.217
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