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Hermann, R., Wendrock, H., Rodan, S., Rößler, U.K., Blum, C.G.F., Wurmehl, S., Büchner, B. (2013) Single crystal growth of antiferromagnetic Mn3Si by a two-phase RF floating-zone method. Journal of Crystal Growth, 363. 1-6 doi:10.1016/j.jcrysgro.2012.09.029

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Reference TypeJournal (article/letter/editorial)
TitleSingle crystal growth of antiferromagnetic Mn3Si by a two-phase RF floating-zone method
JournalJournal of Crystal Growth
AuthorsHermann, R.Author
Wendrock, H.Author
Rodan, S.Author
Rößler, U.K.Author
Blum, C.G.F.Author
Wurmehl, S.Author
Büchner, B.Author
Year2013 (January)Volume363
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2012.09.029Search in ResearchGate
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Mindat Ref. ID2904562Long-form Identifiermindat:1:5:2904562:8
GUID0
Full ReferenceHermann, R., Wendrock, H., Rodan, S., Rößler, U.K., Blum, C.G.F., Wurmehl, S., Büchner, B. (2013) Single crystal growth of antiferromagnetic Mn3Si by a two-phase RF floating-zone method. Journal of Crystal Growth, 363. 1-6 doi:10.1016/j.jcrysgro.2012.09.029
Plain TextHermann, R., Wendrock, H., Rodan, S., Rößler, U.K., Blum, C.G.F., Wurmehl, S., Büchner, B. (2013) Single crystal growth of antiferromagnetic Mn3Si by a two-phase RF floating-zone method. Journal of Crystal Growth, 363. 1-6 doi:10.1016/j.jcrysgro.2012.09.029
In(2013) Journal of Crystal Growth Vol. 363. Elsevier BV

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