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Bugge, F., Crump, P., Frevert, C., Knigge, S., Wenzel, H., Erbert, G., Weyers, M. (2016) MOVPE growth of laser structures for high-power applications at different ambient temperatures. Journal of Crystal Growth, 452. 258-262 doi:10.1016/j.jcrysgro.2015.12.036

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Reference TypeJournal (article/letter/editorial)
TitleMOVPE growth of laser structures for high-power applications at different ambient temperatures
JournalJournal of Crystal Growth
AuthorsBugge, F.Author
Crump, P.Author
Frevert, C.Author
Knigge, S.Author
Wenzel, H.Author
Erbert, G.Author
Weyers, M.Author
Year2016 (October)Volume452
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2015.12.036Search in ResearchGate
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Mindat Ref. ID2912170Long-form Identifiermindat:1:5:2912170:6
GUID0
Full ReferenceBugge, F., Crump, P., Frevert, C., Knigge, S., Wenzel, H., Erbert, G., Weyers, M. (2016) MOVPE growth of laser structures for high-power applications at different ambient temperatures. Journal of Crystal Growth, 452. 258-262 doi:10.1016/j.jcrysgro.2015.12.036
Plain TextBugge, F., Crump, P., Frevert, C., Knigge, S., Wenzel, H., Erbert, G., Weyers, M. (2016) MOVPE growth of laser structures for high-power applications at different ambient temperatures. Journal of Crystal Growth, 452. 258-262 doi:10.1016/j.jcrysgro.2015.12.036
In(2016) Journal of Crystal Growth Vol. 452. Elsevier BV

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Bugge, F., Zeimer, U., Wenzel, H., Erbert, G., Weyers, M. (2004) Interdiffusion in highly strained InGaAs-QWs for high power laser diode applications. Journal of Crystal Growth, 272 (1). 531-537 doi:10.1016/j.jcrysgro.2004.08.050
Pohl, J., Bugge, F., Blume, G., Knigge, A., Knigge, S., Erbert, G., Weyers, M. (2015) Combined Mg/Zn p-type doping for AlGaInP laser diodes. Journal of Crystal Growth, 414. 215-218 doi:10.1016/j.jcrysgro.2014.10.044
Zorn, M., Wenzel, H., Zeimer, U., Sumpf, B., Erbert, G., Weyers, M. (2007) High-power red laser diodes grown by MOVPE. Journal of Crystal Growth, 298. 667-671 doi:10.1016/j.jcrysgro.2006.10.109
Bugge, F., Zorn, M., Zeimer, U., Pietrzak, A., Erbert, G., Weyers, M. (2009) MOVPE growth of InGaAs/GaAsP-MQWs for high-power laser diodes studied by reflectance anisotropy spectroscopy. Journal of Crystal Growth, 311 (4). 1065-1069 doi:10.1016/j.jcrysgro.2008.12.031
Bugge, F., Zeimer, U., Staske, R., Sumpf, B., Erbert, G., Weyers, M. (2007) MOVPE growth optimization for laser diodes with highly strained InGaAs MQWs. Journal of Crystal Growth, 298. 652-657 doi:10.1016/j.jcrysgro.2006.10.086
Bugge, Frank, Netzel, Carsten, Weyers, Markus (2013) MOVPE growth of Al0.85Ga0.15As for high power laser diodes emitting at 808nm. Journal of Crystal Growth, 370. 221-225 doi:10.1016/j.jcrysgro.2012.07.009
Maaßdorf, A., Schultz, C.M., Brox, O., Wenzel, H., Crump, P., Bugge, F., Mogilatenko, A., Erbert, G., Weyers, M., Tränkle, G. (2013) In-situ etching of patterned GaAs/InGaP surfaces for highly efficient 975nm DFB-BA diode lasers. Journal of Crystal Growth, 370. 226-229 doi:10.1016/j.jcrysgro.2012.08.012
Bugge, F., Mogilatenko, A., Zeimer, U., Brox, O., Neumann, W., Erbert, G., Weyers, M. (2011) Characterization and optimization of 2-step MOVPE growth for single-mode DFB or DBR laser diodes. Journal of Crystal Growth, 315 (1). 74-77 doi:10.1016/j.jcrysgro.2010.09.021
Schultz, C. M., Crump, P., Maaßdorf, A., Brox, O., Bugge, F., Mogilatenko, A., Wenzel, H., Knigge, S., Sumpf, B., Weyers, M., Erbert, G., Tränkle, G. (2012) In situ etched gratings embedded in AlGaAs for efficient high power 970 nm distributed feedback broad-area lasers. Applied Physics Letters, 100 (20). 201115pp. doi:10.1063/1.4718916
Bugge, F., Knauer, A., Zeimer, U., Sebastian, J., Smirnitski, V.B., Klehr, A., Erbert, G., Weyers, M. (1998) MOVPE growth of tunable DBR laser diode emitting at 1060nm. Journal of Crystal Growth, 195 (1). 676-680 doi:10.1016/s0022-0248(98)00577-6
Bugge, F., Zorn, M., Zeimer, U., Sharma, T., Kissel, H., Hülsewede, R., Erbert, G., Weyers, M. (2003) Highly strained very high-power laser diodes with InGaAs QWs. Journal of Crystal Growth, 248. 354-358 doi:10.1016/s0022-0248(02)02042-0
 
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