Tao, Yutao, Yeckel, Andrew, Derby, Jeffrey J. (2016) Analysis of particle engulfment during the growth of crystalline silicon. Journal of Crystal Growth, 452. 1-5 doi:10.1016/j.jcrysgro.2015.12.037
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Analysis of particle engulfment during the growth of crystalline silicon | ||
Journal | Journal of Crystal Growth | ||
Authors | Tao, Yutao | Author | |
Yeckel, Andrew | Author | ||
Derby, Jeffrey J. | Author | ||
Year | 2016 (October) | Volume | 452 |
Publisher | Elsevier BV | ||
DOI | doi:10.1016/j.jcrysgro.2015.12.037Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 2912173 | Long-form Identifier | mindat:1:5:2912173:3 |
GUID | 0 | ||
Full Reference | Tao, Yutao, Yeckel, Andrew, Derby, Jeffrey J. (2016) Analysis of particle engulfment during the growth of crystalline silicon. Journal of Crystal Growth, 452. 1-5 doi:10.1016/j.jcrysgro.2015.12.037 | ||
Plain Text | Tao, Yutao, Yeckel, Andrew, Derby, Jeffrey J. (2016) Analysis of particle engulfment during the growth of crystalline silicon. Journal of Crystal Growth, 452. 1-5 doi:10.1016/j.jcrysgro.2015.12.037 | ||
In | (2016) Journal of Crystal Growth Vol. 452. Elsevier BV |
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