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Brunner, F., Edokam, F., Weyers, M. (2016) In-situ control of large area (11–22)-GaN growth on patterned r-plane sapphire. Journal of Crystal Growth, 452. 253-257 doi:10.1016/j.jcrysgro.2016.04.004

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Reference TypeJournal (article/letter/editorial)
TitleIn-situ control of large area (11–22)-GaN growth on patterned r-plane sapphire
JournalJournal of Crystal Growth
AuthorsBrunner, F.Author
Edokam, F.Author
Weyers, M.Author
Year2016 (October)Volume452
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.04.004Search in ResearchGate
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Mindat Ref. ID2912242Long-form Identifiermindat:1:5:2912242:2
GUID0
Full ReferenceBrunner, F., Edokam, F., Weyers, M. (2016) In-situ control of large area (11–22)-GaN growth on patterned r-plane sapphire. Journal of Crystal Growth, 452. 253-257 doi:10.1016/j.jcrysgro.2016.04.004
Plain TextBrunner, F., Edokam, F., Weyers, M. (2016) In-situ control of large area (11–22)-GaN growth on patterned r-plane sapphire. Journal of Crystal Growth, 452. 253-257 doi:10.1016/j.jcrysgro.2016.04.004
In(2016) Journal of Crystal Growth Vol. 452. Elsevier BV

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Kueller, V., Knauer, A., Brunner, F., Zeimer, U., Rodriguez, H., Kneissl, M., Weyers, M. (2011) Growth of AlGaN and AlN on patterned AlN/sapphire templates. Journal of Crystal Growth, 315 (1). 200-203 doi:10.1016/j.jcrysgro.2010.06.040
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Furuya, H., Hashimoto, Y., Yamane, K., Okada, N., Tadatomo, K. (2014) Characterization of {11βˆ’22} GaN grown using two-step growth technique on shallowly etched r-plane patterned sapphire substrates. Journal of Crystal Growth, 391. 41-45 doi:10.1016/j.jcrysgro.2013.12.032
Wernicke, T., Zeimer, U., Netzel, C., Brunner, F., Knauer, A., Weyers, M., Kneissl, M. (2009) Epitaxial lateral overgrowth on (21Β―1Β―0) a-plane GaN with [01Β―11]-oriented stripes. Journal of Crystal Growth, 311 (10). 2895-2898 doi:10.1016/j.jcrysgro.2009.01.039
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