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Mizuno, Y., Tomita, M., Takakura, H., Iwakawa, M., Kambayashi, D., Maruyama, T., Naritsuka, S. (2016) Experimental study of growth mechanism of GaAs microchannel epitaxy – Study of pinning effect of Si-doping. Journal of Crystal Growth, 452. 240-243 doi:10.1016/j.jcrysgro.2016.05.004

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Reference TypeJournal (article/letter/editorial)
TitleExperimental study of growth mechanism of GaAs microchannel epitaxy – Study of pinning effect of Si-doping
JournalJournal of Crystal Growth
AuthorsMizuno, Y.Author
Tomita, M.Author
Takakura, H.Author
Iwakawa, M.Author
Kambayashi, D.Author
Maruyama, T.Author
Naritsuka, S.Author
Year2016 (October)Volume452
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.05.004Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2912283Long-form Identifiermindat:1:5:2912283:9
GUID0
Full ReferenceMizuno, Y., Tomita, M., Takakura, H., Iwakawa, M., Kambayashi, D., Maruyama, T., Naritsuka, S. (2016) Experimental study of growth mechanism of GaAs microchannel epitaxy – Study of pinning effect of Si-doping. Journal of Crystal Growth, 452. 240-243 doi:10.1016/j.jcrysgro.2016.05.004
Plain TextMizuno, Y., Tomita, M., Takakura, H., Iwakawa, M., Kambayashi, D., Maruyama, T., Naritsuka, S. (2016) Experimental study of growth mechanism of GaAs microchannel epitaxy – Study of pinning effect of Si-doping. Journal of Crystal Growth, 452. 240-243 doi:10.1016/j.jcrysgro.2016.05.004
In(2016) Journal of Crystal Growth Vol. 452. Elsevier BV

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