Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Gao, Bing, Juel, Mari, Mhamdi, Mohammed (2016) Influence of grown-in defects on final oxygen precipitates during heat treatment of Cz-Si wafer analyzed by a coupled model with the interaction of point defects, oxygen precipitates, and dislocation loops. Journal of Crystal Growth, 453. 173-179 doi:10.1016/j.jcrysgro.2016.08.046

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleInfluence of grown-in defects on final oxygen precipitates during heat treatment of Cz-Si wafer analyzed by a coupled model with the interaction of point defects, oxygen precipitates, and dislocation loops
JournalJournal of Crystal Growth
AuthorsGao, BingAuthor
Juel, MariAuthor
Mhamdi, MohammedAuthor
Year2016 (November)Volume453
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.08.046Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2912387Long-form Identifiermindat:1:5:2912387:4
GUID0
Full ReferenceGao, Bing, Juel, Mari, Mhamdi, Mohammed (2016) Influence of grown-in defects on final oxygen precipitates during heat treatment of Cz-Si wafer analyzed by a coupled model with the interaction of point defects, oxygen precipitates, and dislocation loops. Journal of Crystal Growth, 453. 173-179 doi:10.1016/j.jcrysgro.2016.08.046
Plain TextGao, Bing, Juel, Mari, Mhamdi, Mohammed (2016) Influence of grown-in defects on final oxygen precipitates during heat treatment of Cz-Si wafer analyzed by a coupled model with the interaction of point defects, oxygen precipitates, and dislocation loops. Journal of Crystal Growth, 453. 173-179 doi:10.1016/j.jcrysgro.2016.08.046
In(2016) Journal of Crystal Growth Vol. 453. Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Kimura, Shigeharu (1994) Observation of Oxygen Precipitates in CZ-Grown Si Wafers with a Phase Differential Scanning Optical Microscope. Journal of the Electrochemical Society, 141. doi:10.1149/1.2055174
Zeng, Zhidan, Ma, Xiangyang, Chen, Jiahe, Yang, Deren, Ratschinski, Ingmar, Hevroth, Frank, Leipner, Hartmut S. (2010) Effect of oxygen precipitates on dislocation motion in Czochralski silicon. Journal of Crystal Growth, 312 (2). 169-173 doi:10.1016/j.jcrysgro.2009.10.030
Furuya, H. (1988) Formation of Nuclei of Oxygen Precipitates in CZ Silicon Crystals during Crystal Growth Process. Journal of the Electrochemical Society, 135. 677pp. doi:10.1149/1.2095710
Li, Zhen, Will, Johannes, Dong, Peng, Yang, Deren (2017) Thermal history effect on the nucleation of oxygen precipitates in germanium doped Cz-silicon studied by high-energy X-ray diffraction. Journal of Crystal Growth, 479. 46-51 doi:10.1016/j.jcrysgro.2017.09.023
Hasebe, Mitsuhiro, Corbett, James W., Kawakami, Kazuto (1992) Morphology Change of Oxygen Precipitates in Cz-Si Wafers during Two-Step Heat-Treatment. Materials Science Forum, 83. 1475-1480 doi:10.4028/www.scientific.net/msf.83-87.1475
Mukaiyama, Yuji, Sueoka, Koji (2022) Numerical investigation of impact of crystal diameter fluctuations on intrinsic point defects distribution in Si crystal grown by Czochralski method. Journal of Crystal Growth, 595. 126814 doi:10.1016/j.jcrysgro.2022.126814
Baštecká, J., Kroupa, F. (1964) Elastic interaction of dislocation loops and point defects. Czechoslovak Journal of Physics, 14 (6). 443-453 doi:10.1007/bf01689477
Hattori, Y., Chubaci, J.F.D., Matsuoka, M., Freitas, J.A., da Silva, A. Ferreira (2016) Investigation of oxygen defects in wurtzite InN by using density functional theory. Journal of Crystal Growth, 456. 168-173 doi:10.1016/j.jcrysgro.2016.08.058
Sueoka, K., Nakamura, K., Vanhellemont, J. (2017) Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing Czochralski Si crystals. Journal of Crystal Growth, 474. 89-95 doi:10.1016/j.jcrysgro.2016.12.061
Abe, T., Takahashi, T., Shirai, K. (2017) Steady distribution structure of point defects near crystal-melt interface under pulling stop of CZ Si crystal. Journal of Crystal Growth, 459. 87-94 doi:10.1016/j.jcrysgro.2016.11.073
Xu, Jin, Lv, Yaochao, Guo, Weibin, Xie, Tingting (2016) Effect of ramping on oxygen precipitates and Cu–vacancy complex in Czochralski silicon. Journal of Crystal Growth, 445. 53-57 doi:10.1016/j.jcrysgro.2016.03.042
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 28, 2025 18:23:50
Go to top of page