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Liu, Nanliu, Cheng, Yutian, Wu, Jiejun, Li, Xingbin, Yu, Tongjun, Xiong, Huan, Li, Wenhui, Chen, Jiao, Zhang, Guoyi (2016) HVPE homoepitaxial growth of high quality bulk GaN using acid wet etching method and its mechanism analysis. Journal of Crystal Growth, 454. 59-63 doi:10.1016/j.jcrysgro.2016.08.038

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Reference TypeJournal (article/letter/editorial)
TitleHVPE homoepitaxial growth of high quality bulk GaN using acid wet etching method and its mechanism analysis
JournalJournal of Crystal Growth
AuthorsLiu, NanliuAuthor
Cheng, YutianAuthor
Wu, JiejunAuthor
Li, XingbinAuthor
Yu, TongjunAuthor
Xiong, HuanAuthor
Li, WenhuiAuthor
Chen, JiaoAuthor
Zhang, GuoyiAuthor
Year2016 (November)Volume454
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.08.038Search in ResearchGate
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Mindat Ref. ID2912407Long-form Identifiermindat:1:5:2912407:7
GUID0
Full ReferenceLiu, Nanliu, Cheng, Yutian, Wu, Jiejun, Li, Xingbin, Yu, Tongjun, Xiong, Huan, Li, Wenhui, Chen, Jiao, Zhang, Guoyi (2016) HVPE homoepitaxial growth of high quality bulk GaN using acid wet etching method and its mechanism analysis. Journal of Crystal Growth, 454. 59-63 doi:10.1016/j.jcrysgro.2016.08.038
Plain TextLiu, Nanliu, Cheng, Yutian, Wu, Jiejun, Li, Xingbin, Yu, Tongjun, Xiong, Huan, Li, Wenhui, Chen, Jiao, Zhang, Guoyi (2016) HVPE homoepitaxial growth of high quality bulk GaN using acid wet etching method and its mechanism analysis. Journal of Crystal Growth, 454. 59-63 doi:10.1016/j.jcrysgro.2016.08.038
In(2016) Journal of Crystal Growth Vol. 454. Elsevier BV

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