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Lee, Ho-Jun, Bae, Si-Young, Lekhal, Kaddour, Mitsunari, Tadashi, Tamura, Akira, Honda, Yoshio, Amano, Hiroshi (2016) Improved crystal quality of semipolar (101¯3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer. Journal of Crystal Growth, 454. 114-120 doi:10.1016/j.jcrysgro.2016.09.004

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Reference TypeJournal (article/letter/editorial)
TitleImproved crystal quality of semipolar (101¯3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer
JournalJournal of Crystal Growth
AuthorsLee, Ho-JunAuthor
Bae, Si-YoungAuthor
Lekhal, KaddourAuthor
Mitsunari, TadashiAuthor
Tamura, AkiraAuthor
Honda, YoshioAuthor
Amano, HiroshiAuthor
Year2016 (November)Volume454
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.09.004Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2912441Long-form Identifiermindat:1:5:2912441:1
GUID0
Full ReferenceLee, Ho-Jun, Bae, Si-Young, Lekhal, Kaddour, Mitsunari, Tadashi, Tamura, Akira, Honda, Yoshio, Amano, Hiroshi (2016) Improved crystal quality of semipolar (101¯3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer. Journal of Crystal Growth, 454. 114-120 doi:10.1016/j.jcrysgro.2016.09.004
Plain TextLee, Ho-Jun, Bae, Si-Young, Lekhal, Kaddour, Mitsunari, Tadashi, Tamura, Akira, Honda, Yoshio, Amano, Hiroshi (2016) Improved crystal quality of semipolar (101¯3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer. Journal of Crystal Growth, 454. 114-120 doi:10.1016/j.jcrysgro.2016.09.004
In(2016) Journal of Crystal Growth Vol. 454. Elsevier BV

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Lee, Ho-Jun, Bae, Si-Young, Lekhal, Kaddour, Tamura, Akira, Suzuki, Takafumi, Kushimoto, Maki, Honda, Yoshio, Amano, Hiroshi (2017) Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer. Journal of Crystal Growth, 468. 547-551 doi:10.1016/j.jcrysgro.2016.11.116
Lekhal, Kaddour, Bae, Si-Young, Lee, Ho-Jun, Mitsunari, Tadashi, Tamura, Akira, Deki, Manato, Honda, Yoshio, Amano, Hiroshi (2016) Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy. Japanese Journal of Applied Physics, 55 (5) 5 doi:10.7567/jjap.55.05ff03
Mitsunari, T., Lee, H.J., Honda, Y., Amano, H. (2015) Single-crystalline semipolar GaN on Si(001) using a directional sputtered AlN intermediate layer. Journal of Crystal Growth, 431. 60-63 doi:10.1016/j.jcrysgro.2015.08.027
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