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Zhang, Zhi, Fang, Haisheng, Yao, Qingxia, Yan, Han, Gan, Zhiyin (2016) Species transport and chemical reaction in a MOCVD reactor and their influence on the GaN growth uniformity. Journal of Crystal Growth, 454. 87-95 doi:10.1016/j.jcrysgro.2016.09.010

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Reference TypeJournal (article/letter/editorial)
TitleSpecies transport and chemical reaction in a MOCVD reactor and their influence on the GaN growth uniformity
JournalJournal of Crystal Growth
AuthorsZhang, ZhiAuthor
Fang, HaishengAuthor
Yao, QingxiaAuthor
Yan, HanAuthor
Gan, ZhiyinAuthor
Year2016 (November)Volume454
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.09.010Search in ResearchGate
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Mindat Ref. ID2912455Long-form Identifiermindat:1:5:2912455:4
GUID0
Full ReferenceZhang, Zhi, Fang, Haisheng, Yao, Qingxia, Yan, Han, Gan, Zhiyin (2016) Species transport and chemical reaction in a MOCVD reactor and their influence on the GaN growth uniformity. Journal of Crystal Growth, 454. 87-95 doi:10.1016/j.jcrysgro.2016.09.010
Plain TextZhang, Zhi, Fang, Haisheng, Yao, Qingxia, Yan, Han, Gan, Zhiyin (2016) Species transport and chemical reaction in a MOCVD reactor and their influence on the GaN growth uniformity. Journal of Crystal Growth, 454. 87-95 doi:10.1016/j.jcrysgro.2016.09.010
In(2016) Journal of Crystal Growth Vol. 454. Elsevier BV

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Jiang, Zhimin, Yan, Han, Liu, Sheng, Zhang, Zhi, Gan, Zhiyin, Fang, Haisheng (2016) Uniformity investigation of MOCVD‐grown LED layers. Crystal Research and Technology, 51 (1) 30-40 doi:10.1002/crat.201500135
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