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Riedi, S., Reichl, C., Berl, M., Alt, L., Maier, A., Wegscheider, W. (2016) Electron gas quality at various (110)-GaAs interfaces as benchmark for cleaved edge overgrowth. Journal of Crystal Growth, 455. 37-42 doi:10.1016/j.jcrysgro.2016.09.022

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Reference TypeJournal (article/letter/editorial)
TitleElectron gas quality at various (110)-GaAs interfaces as benchmark for cleaved edge overgrowth
JournalJournal of Crystal Growth
AuthorsRiedi, S.Author
Reichl, C.Author
Berl, M.Author
Alt, L.Author
Maier, A.Author
Wegscheider, W.Author
Year2016 (December)Volume455
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.09.022Search in ResearchGate
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Mindat Ref. ID2912490Long-form Identifiermindat:1:5:2912490:7
GUID0
Full ReferenceRiedi, S., Reichl, C., Berl, M., Alt, L., Maier, A., Wegscheider, W. (2016) Electron gas quality at various (110)-GaAs interfaces as benchmark for cleaved edge overgrowth. Journal of Crystal Growth, 455. 37-42 doi:10.1016/j.jcrysgro.2016.09.022
Plain TextRiedi, S., Reichl, C., Berl, M., Alt, L., Maier, A., Wegscheider, W. (2016) Electron gas quality at various (110)-GaAs interfaces as benchmark for cleaved edge overgrowth. Journal of Crystal Growth, 455. 37-42 doi:10.1016/j.jcrysgro.2016.09.022
In(2016) Journal of Crystal Growth Vol. 455. Elsevier BV

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Alt, L., Reichl, C., Berl, M., Dietsche, W., Wegscheider, W. (2021) Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition. Scientific Reports, 11 (1) doi:10.1038/s41598-021-01130-8
Schläpfer, F., Dietsche, W., Reichl, C., Faelt, S., Wegscheider, W. (2016) Photoluminescence and the gallium problem for highest-mobility GaAs/AlGaAs-based 2d electron gases. Journal of Crystal Growth, 442. 114-120 doi:10.1016/j.jcrysgro.2016.02.039
Sorba, L., Schedelbeck, G., Wegscheider, W., Bichler, M., Böhm, G., Abstreiter, G. (1999) Magneto-optical studies of GaAs/AlGaAs T-shaped quantum wire structures fabricated by cleaved edge overgrowth. Journal of Crystal Growth, 201. 805-809 doi:10.1016/s0022-0248(98)01480-8
Wegscheider, W., Pfeiffer, L.N., Pinczuk, A., West, K.W., Dignam, M.M., Hull, R., Leibenguth, R.E. (1995) GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth. Journal of Crystal Growth, 150. 285-292 doi:10.1016/0022-0248(95)80222-x
Peters, S., Tiemann, L., Reichl, C., Wegscheider, W. (2016) Gating versus doping: Quality parameters of two-dimensional electron systems in undoped and doped GaAs/AlGaAs heterostructures. Physical Review B, 94 (4) doi:10.1103/physrevb.94.045304
Pfeiffer, Loren, Störmer, H.L., Baldwin, K.W., West, K.W., Goñi, A.R., Pinczuk, A., Ashoori, R.C., Dignam, M.M., Wegscheider, W. (1993) Cleaved edge overgrowth for quantum wire fabrication. Journal of Crystal Growth, 127 (1). 849-857 doi:10.1016/0022-0248(93)90746-j
Gerl, C., Bauer, J., Wegscheider, W. (2007) Growth and subband structure determination of high mobility hole gases on (001) and (110) GaAs. Journal of Crystal Growth, 301. 145-147 doi:10.1016/j.jcrysgro.2006.11.096
Kristukat, C., Gonñi, A. R., Bichler, M., Wegscheider, W., Abstreiter, G., Thomsen, C. (2004) Photoluminescence of one-dimensional electron gases in cleaved-edge overgrowth quantum wires. physica status solidi (b), 241 (5). 1041-1045 doi:10.1002/pssb.200301968
Wegscheider, W., Schedelbeck, G., Abstreiter, G., Rother, M., Bichler, M. (1997) Atomically Precise GaAs/AlGaAs Quantum Dots Fabricated by Twofold Cleaved Edge Overgrowth. Physical Review Letters, 79 (10). 1917-1920 doi:10.1103/physrevlett.79.1917
Khouri, T., Zeitler, U., Reichl, C., Wegscheider, W., Hussey, N. E., Wiedmann, S., Maan, J. C. (2016) Linear Magnetoresistance in a Quasifree Two-Dimensional Electron Gas in an Ultrahigh Mobility GaAs Quantum Well. Physical Review Letters, 117 (25). doi:10.1103/physrevlett.117.256601
Wang, Zhuo, Samaraweera, R. L., Reichl, C., Wegscheider, W., Mani, R. G. (2016) Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. Scientific Reports, 6. doi:10.1038/srep38516
 
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