Tsubouchi, Nobuteru, Mokuno, Yoshiaki (2016) Configuration of a single grown-in dislocation corresponding to one etch pit formed on the surface of CVD homoepitaxial diamond. Journal of Crystal Growth, 455. 71-75 doi:10.1016/j.jcrysgro.2016.09.030
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Configuration of a single grown-in dislocation corresponding to one etch pit formed on the surface of CVD homoepitaxial diamond | ||
Journal | Journal of Crystal Growth | ||
Authors | Tsubouchi, Nobuteru | Author | |
Mokuno, Yoshiaki | Author | ||
Year | 2016 (December) | Volume | 455 |
Publisher | Elsevier BV | ||
DOI | doi:10.1016/j.jcrysgro.2016.09.030Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 2912500 | Long-form Identifier | mindat:1:5:2912500:3 |
GUID | 0 | ||
Full Reference | Tsubouchi, Nobuteru, Mokuno, Yoshiaki (2016) Configuration of a single grown-in dislocation corresponding to one etch pit formed on the surface of CVD homoepitaxial diamond. Journal of Crystal Growth, 455. 71-75 doi:10.1016/j.jcrysgro.2016.09.030 | ||
Plain Text | Tsubouchi, Nobuteru, Mokuno, Yoshiaki (2016) Configuration of a single grown-in dislocation corresponding to one etch pit formed on the surface of CVD homoepitaxial diamond. Journal of Crystal Growth, 455. 71-75 doi:10.1016/j.jcrysgro.2016.09.030 | ||
In | (2016) Journal of Crystal Growth Vol. 455. Elsevier BV |
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