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Liu, Hao, Wang, Qi, Chen, Jia, Liu, Kai, Ren, Xiaomin (2016) MOCVD growth and characterization of multi-stacked InAs/GaAs quantum dots on misoriented Si(100) emitting near 1.3 μm. Journal of Crystal Growth, 455. 168-171 doi:10.1016/j.jcrysgro.2016.09.033

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Reference TypeJournal (article/letter/editorial)
TitleMOCVD growth and characterization of multi-stacked InAs/GaAs quantum dots on misoriented Si(100) emitting near 1.3 μm
JournalJournal of Crystal Growth
AuthorsLiu, HaoAuthor
Wang, QiAuthor
Chen, JiaAuthor
Liu, KaiAuthor
Ren, XiaominAuthor
Year2016 (December)Volume455
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.09.033Search in ResearchGate
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Mindat Ref. ID2912507Long-form Identifiermindat:1:5:2912507:6
GUID0
Full ReferenceLiu, Hao, Wang, Qi, Chen, Jia, Liu, Kai, Ren, Xiaomin (2016) MOCVD growth and characterization of multi-stacked InAs/GaAs quantum dots on misoriented Si(100) emitting near 1.3 μm. Journal of Crystal Growth, 455. 168-171 doi:10.1016/j.jcrysgro.2016.09.033
Plain TextLiu, Hao, Wang, Qi, Chen, Jia, Liu, Kai, Ren, Xiaomin (2016) MOCVD growth and characterization of multi-stacked InAs/GaAs quantum dots on misoriented Si(100) emitting near 1.3 μm. Journal of Crystal Growth, 455. 168-171 doi:10.1016/j.jcrysgro.2016.09.033
In(2016) Journal of Crystal Growth Vol. 455. Elsevier BV

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Yan, Xin, Zhang, Xia, Li, Junshuai, Cui, Jiangong, Wang, Qi, Huang, Yongqing, Ren, Xiaomin (2013) Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion. Journal of Crystal Growth, 384. 82-87 doi:10.1016/j.jcrysgro.2013.09.014
Jia, Zhigang, Wang, Qi, Ren, Xiaomin, Wang, Yifan, Cai, Shiwei, Zhang, Xia, Huang, Yongqing (2014) LP-MOCVD growth of BGaAsSb thick layers and BGaAsSb/GaAs quantum well structures on GaAs (001) substrates. Journal of Crystal Growth, 394. 74-80 doi:10.1016/j.jcrysgro.2014.02.017
Yan, Xin, Tang, Fengling, Wu, Yao, Li, Bang, Zhang, Xia, Ren, Xiaomin (2017) Growth of isolated InAs quantum dots on core-shell GaAs/InP nanowire sidewalls by MOCVD. Journal of Crystal Growth, 468. 185-187 doi:10.1016/j.jcrysgro.2016.11.085
Liu, Hao, Wang, Qi, Li, Zhiming, Chen, Jia, Liu, Kai, Ren, Xiaomin (2018) 1.16 μm InAs/GaAs Quantum Dot Laser grown by Metal Organic Chemical Vapor Deposition. Acta Physica Polonica A, 134 (2). 508-511 doi:10.12693/aphyspola.134.508
Tey, C.M., Liu, H.Y., Cullis, A.G., Ross, I.M., Hopkinson, M. (2005) Structural studies of a combined InAlAs–InGaAs capping layer on 1.3-μm Inas/GaAs quantum dots. Journal of Crystal Growth, 285 (1). 17-23 doi:10.1016/j.jcrysgro.2005.06.059
Zhao, Z.M., Hul’ko, O., Kim, H.J., Liu, J., Sugahari, T., Shi, B., Xie, Y.H. (2004) Growth and characterization of InAs quantum dots on Si(001) substrates. Journal of Crystal Growth, 271 (3). 450-455 doi:10.1016/j.jcrysgro.2004.08.013
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Chang, Y.A., Chu, J.T., Ko, C.T., Kuo, H.C., Lin, C.F., Wang, S.C. (2006) MOCVD growth of highly strained 1.3 μm InGaAs:Sb/GaAs vertical cavity surface emitting laser. Journal of Crystal Growth, 287 (2). 550-553 doi:10.1016/j.jcrysgro.2005.10.030
Huang, Xiu-Qi, Liu, Feng-Qi, Che, Xiao-Ling, Liu, Jun-Qi, Lei, Wen, Wang, Zhan-Guo (2004) Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures. Journal of Crystal Growth, 270 (3). 364-369 doi:10.1016/j.jcrysgro.2004.07.004
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