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Freitas, J.A., Culbertson, J.C., Mahadik, N.A., Sochacki, T., Iwinska, M., Bockowski, M.S. (2016) HVPE GaN wafers with improved crystalline and electrical properties. Journal of Crystal Growth, 456. 113-120 doi:10.1016/j.jcrysgro.2016.06.052

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Reference TypeJournal (article/letter/editorial)
TitleHVPE GaN wafers with improved crystalline and electrical properties
JournalJournal of Crystal Growth
AuthorsFreitas, J.A.Author
Culbertson, J.C.Author
Mahadik, N.A.Author
Sochacki, T.Author
Iwinska, M.Author
Bockowski, M.S.Author
Year2016 (December)Volume456
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.06.052Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2912576Long-form Identifiermindat:1:5:2912576:6
GUID0
Full ReferenceFreitas, J.A., Culbertson, J.C., Mahadik, N.A., Sochacki, T., Iwinska, M., Bockowski, M.S. (2016) HVPE GaN wafers with improved crystalline and electrical properties. Journal of Crystal Growth, 456. 113-120 doi:10.1016/j.jcrysgro.2016.06.052
Plain TextFreitas, J.A., Culbertson, J.C., Mahadik, N.A., Sochacki, T., Iwinska, M., Bockowski, M.S. (2016) HVPE GaN wafers with improved crystalline and electrical properties. Journal of Crystal Growth, 456. 113-120 doi:10.1016/j.jcrysgro.2016.06.052
In(2016) Journal of Crystal Growth Vol. 456. Elsevier BV

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Freitas, J.A., Culbertson, J.C., Mahadik, N.A., Glaser, E.R., Sochacki, T., Bockowski, M., Lee, S.K., Shim, K.B. (2016) Incorporation of pervasive impurities on HVPE GaN growth directions. Journal of Crystal Growth, 456. 101-107 doi:10.1016/j.jcrysgro.2016.07.033
Freitas, J.A., Culbertson, J.C., Mahadik, N.A., Tadjer, M.J., Wu, S., Raghothamachar, B., Dudley, M., Sochacki, T., Bockowski, M. (2018) Homoepitaxial HVPE GaN: A potential substrate for high performance devices. Journal of Crystal Growth, 500. 104-110 doi:10.1016/j.jcrysgro.2018.08.007
Lucznik, B., Iwinska, M., Sochacki, T., Amilusik, M., Fijalkowski, M., Grzegory, I., Bockowski, M. (2016) Growth of HVPE-GaN on native seeds – numerical simulation based on experimental results. Journal of Crystal Growth, 456. 86-90 doi:10.1016/j.jcrysgro.2016.08.049
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Domagala, J.Z., Smalc-Koziorowska, J., Iwinska, M., Sochacki, T., Amilusik, M., Lucznik, B., Fijalkowski, M., Kamler, G., Grzegory, I., Kucharski, R., Zajac, M., Bockowski, M. (2016) Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates. Journal of Crystal Growth, 456. 80-85 doi:10.1016/j.jcrysgro.2016.07.043
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