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Novikov, S.V., Staddon, C.R., Sahonta, S.-L., Oliver, R.A., Humphreys, C.J., Foxon, C.T. (2016) Growth of free-standing bulk wurtzite Al Ga1−N layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth, 456. 151-154 doi:10.1016/j.jcrysgro.2016.07.038

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of free-standing bulk wurtzite Al Ga1−N layers by molecular beam epitaxy using a highly efficient RF plasma source
JournalJournal of Crystal Growth
AuthorsNovikov, S.V.Author
Staddon, C.R.Author
Sahonta, S.-L.Author
Oliver, R.A.Author
Humphreys, C.J.Author
Foxon, C.T.Author
Year2016 (December)Volume456
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.07.038Search in ResearchGate
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Mindat Ref. ID2912585Long-form Identifiermindat:1:5:2912585:4
GUID0
Full ReferenceNovikov, S.V., Staddon, C.R., Sahonta, S.-L., Oliver, R.A., Humphreys, C.J., Foxon, C.T. (2016) Growth of free-standing bulk wurtzite Al Ga1−N layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth, 456. 151-154 doi:10.1016/j.jcrysgro.2016.07.038
Plain TextNovikov, S.V., Staddon, C.R., Sahonta, S.-L., Oliver, R.A., Humphreys, C.J., Foxon, C.T. (2016) Growth of free-standing bulk wurtzite Al Ga1−N layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth, 456. 151-154 doi:10.1016/j.jcrysgro.2016.07.038
In(2016) Journal of Crystal Growth Vol. 456. Elsevier BV

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Novikov, S.V., Staddon, C.R., Martin, R.W., Kent, A.J., Foxon, C.T. (2015) Molecular beam epitaxy of free-standing wurtzite Al Ga1−N layers. Journal of Crystal Growth, 425. 125-128 doi:10.1016/j.jcrysgro.2015.02.010
Novikov, S. V., Staddon, C. R., Sahonta, S.-L., Oliver, R. A., Humphreys, C. J., Foxon, C. T. (2016) Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source. physica status solidi (c), 13 (5). 217-220 doi:10.1002/pssc.201510166
Novikov, S.V., Powell, R.E. L., Staddon, C.R., Kent, A.J., Foxon, C.T. (2014) Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy. Journal of Crystal Growth, 403. 43-47 doi:10.1016/j.jcrysgro.2014.06.014
Novikov, S.V., Staddon, C.R., Powell, R.E.L., Akimov, A.V., Luckert, F., Edwards, P.R., Martin, R.W., Kent, A.J., Foxon, C.T. (2011) Wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy. Journal of Crystal Growth, 322 (1). 23-26 doi:10.1016/j.jcrysgro.2011.03.016
Novikov, S.V., Staddon, C.R., Luckert, F., Edwards, P.R., Martin, R.W., Kent, A.J., Foxon, C.T. (2012) Zinc-blende and wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy. Journal of Crystal Growth, 350 (1). 80-84 doi:10.1016/j.jcrysgro.2011.12.028
Novikov, S.V., Staddon, C.R., Foxon, C.T., Luckert, F., Edwards, P.R., Martin, R.W., Kent, A.J. (2011) Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals. Journal of Crystal Growth, 323 (1). 80-83 doi:10.1016/j.jcrysgro.2010.10.125
Novikov, S.V., Foxon, C.T. (2017) Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources. Journal of Crystal Growth, 477. 154-158 doi:10.1016/j.jcrysgro.2017.01.007
Hall, J.L., Moram, M.A., Sanchez, A., Novikov, S.V., Kent, A.J., Foxon, C.T., Humphreys, C.J., Campion, R.P. (2009) Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth, 311 (7). 2054-2057 doi:10.1016/j.jcrysgro.2008.11.084
Novikov, S.V., Staddon, C.R., Kent, A.J., Foxon, C.T. (2011) Plasma-assisted electroepitaxy as a method for the growth of GaN layers. Journal of Crystal Growth, 316 (1). 51-55 doi:10.1016/j.jcrysgro.2010.12.062
Novikov, S.V., Staddon, C.R., Akimov, A.V., Campion, R.P., Zainal, N., Kent, A.J., Foxon, C.T., Chen, C.H., Yu, K.M., Walukiewicz, W. (2009) Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content. Journal of Crystal Growth, 311 (13). 3417-3422 doi:10.1016/j.jcrysgro.2009.04.010
Foxon, C.T., Novikov, S.V., Zhao, L.X., Edmonds, K.W., Giddings, A.D., Wang, K.Y., Campion, R.P., Staddon, C.R., Fay, M.W., Han, Y., Brown, P.D., Sawicki, M., Gallagher, B.L. (2005) Molecular beam epitaxy of p-type cubic GaMnN layers. Journal of Crystal Growth, 278 (1). 685-689 doi:10.1016/j.jcrysgro.2004.12.112
 
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