Miyake, Hideto, Lin, Chia-Hung, Tokoro, Kenta, Hiramatsu, Kazumasa (2016) Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing. Journal of Crystal Growth, 456. 155-159 doi:10.1016/j.jcrysgro.2016.08.028
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing | ||
Journal | Journal of Crystal Growth | ||
Authors | Miyake, Hideto | Author | |
Lin, Chia-Hung | Author | ||
Tokoro, Kenta | Author | ||
Hiramatsu, Kazumasa | Author | ||
Year | 2016 (December) | Volume | 456 |
Publisher | Elsevier BV | ||
DOI | doi:10.1016/j.jcrysgro.2016.08.028Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 2912609 | Long-form Identifier | mindat:1:5:2912609:3 |
GUID | 0 | ||
Full Reference | Miyake, Hideto, Lin, Chia-Hung, Tokoro, Kenta, Hiramatsu, Kazumasa (2016) Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing. Journal of Crystal Growth, 456. 155-159 doi:10.1016/j.jcrysgro.2016.08.028 | ||
Plain Text | Miyake, Hideto, Lin, Chia-Hung, Tokoro, Kenta, Hiramatsu, Kazumasa (2016) Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing. Journal of Crystal Growth, 456. 155-159 doi:10.1016/j.jcrysgro.2016.08.028 | ||
In | (2016) Journal of Crystal Growth Vol. 456. Elsevier BV |
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