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Liliental-Weber, Z., Reis, Roberto dos, Weyher, Jan L., Staszczak, Grzegorz, Jakieła, Rafał (2016) The importance of structural inhomogeneity in GaN thin films. Journal of Crystal Growth, 456. 160-167 doi:10.1016/j.jcrysgro.2016.08.059

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Reference TypeJournal (article/letter/editorial)
TitleThe importance of structural inhomogeneity in GaN thin films
JournalJournal of Crystal Growth
AuthorsLiliental-Weber, Z.Author
Reis, Roberto dosAuthor
Weyher, Jan L.Author
Staszczak, GrzegorzAuthor
Jakieła, RafałAuthor
Year2016 (December)Volume456
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.08.059Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2912646Long-form Identifiermindat:1:5:2912646:4
GUID0
Full ReferenceLiliental-Weber, Z., Reis, Roberto dos, Weyher, Jan L., Staszczak, Grzegorz, Jakieła, Rafał (2016) The importance of structural inhomogeneity in GaN thin films. Journal of Crystal Growth, 456. 160-167 doi:10.1016/j.jcrysgro.2016.08.059
Plain TextLiliental-Weber, Z., Reis, Roberto dos, Weyher, Jan L., Staszczak, Grzegorz, Jakieła, Rafał (2016) The importance of structural inhomogeneity in GaN thin films. Journal of Crystal Growth, 456. 160-167 doi:10.1016/j.jcrysgro.2016.08.059
In(2016) Journal of Crystal Growth Vol. 456. Elsevier BV

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Liliental-Weber, Z., dos Reis, R., Mancuso, M., Song, C.Y., Grzegory, I., Porowski, S., Bockowski, M. (2014) Structural defects in bulk GaN. Journal of Crystal Growth, 403. 66-71 doi:10.1016/j.jcrysgro.2014.06.022
Liliental-Weber, Z., dos Reis, R., Sochacki, T., Bockowski, M. (2018) The influence of the substrate misorientation on the structural quality of GaN layers grown by HVPE. Journal of Crystal Growth, 498. 346-351 doi:10.1016/j.jcrysgro.2018.07.010
Weyher, J.L., Lazar, S., Macht, L., Liliental-Weber, Z., Molnar, R.J., Müller, S., Sivel, V.G.M., Nowak, G., Grzegory, I. (2007) Orthodox etching of HVPE-grown GaN. Journal of Crystal Growth, 305 (2). 384-392 doi:10.1016/j.jcrysgro.2007.03.030
Liliental-Weber, Z., dos Reis, Roberto (2024) Effects of structural defects on optical properties of InxGa1−xN layers and quantum wells. Journal of Applied Physics, 135 (9) doi:10.1063/5.0185713
Liliental-Weber, Z. (2010) Extended defects in bulk GaN and III-nitrides grown on this substrate. Journal of Crystal Growth, 312 (18). 2599-2606 doi:10.1016/j.jcrysgro.2010.04.019
Paduano, Q.S., Weyburne, D.W., Jasinski, J., Liliental-Weber, Z. (2004) Effect of initial process conditions on the structural properties of AlN films. Journal of Crystal Growth, 261 (2). 259-265 doi:10.1016/j.jcrysgro.2003.11.017
Weyher, J.L., Sochacki, T., Amilusik, M., Fijałkowski, M., Łucznik, B., Jakieła, R., Staszczak, G., Nikolenko, A., Strelchuk, V., Sadovyi, B., Boćkowski, M., Grzegory, I. (2014) Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange. Journal of Crystal Growth, 403. 77-82 doi:10.1016/j.jcrysgro.2014.06.009
Liliental-Weber, Z. (2008) TEM studies of GaN layers grown in non-polar direction: Laterally overgrown and pendeo-epitaxial layers. Journal of Crystal Growth, 310 (17). 4011-4015 doi:10.1016/j.jcrysgro.2008.06.016
Bishop, S.M., Park, J.-S., Gu, J., Wagner, B.P., Reitmeier, Z.J., Batchelor, D.A., Zakharov, D.N., Liliental-Weber, Z., Davis, R.F. (2007) Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (112¯0). Journal of Crystal Growth, 300 (1). 83-89 doi:10.1016/j.jcrysgro.2006.10.207
Liliental-Weber, Z., Tomaszewicz, T., Zakharov, D., O’Keefe, M.A. (2005) Defects in p-doped bulk GaN crystals grown with Ga polarity. Journal of Crystal Growth, 281 (1). 125-134 doi:10.1016/j.jcrysgro.2005.03.049
Pakuła, K., Bożek, R., Baranowski, J.M., Jasinski, J., Liliental-Weber, Z. (2004) Reduction of dislocation density in heteroepitaxial GaN: role of SiH4 treatment. Journal of Crystal Growth, 267 (1). 1-7 doi:10.1016/j.jcrysgro.2004.03.020
 
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