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Krzyżewski, Filip, Załuska-Kotur, Magdalena A., Turski, Henryk, Sawicka, Marta, Skierbiszewski, Czesław (2017) Miscut dependent surface evolution in the process of N-polar GaN(0001¯) growth under N-rich condition. Journal of Crystal Growth, 457. 38-45 doi:10.1016/j.jcrysgro.2016.05.051

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Reference TypeJournal (article/letter/editorial)
TitleMiscut dependent surface evolution in the process of N-polar GaN(0001¯) growth under N-rich condition
JournalJournal of Crystal Growth
AuthorsKrzyżewski, FilipAuthor
Załuska-Kotur, Magdalena A.Author
Turski, HenrykAuthor
Sawicka, MartaAuthor
Skierbiszewski, CzesławAuthor
Year2017 (January)Volume457
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.05.051Search in ResearchGate
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Mindat Ref. ID2912751Long-form Identifiermindat:1:5:2912751:5
GUID0
Full ReferenceKrzyżewski, Filip, Załuska-Kotur, Magdalena A., Turski, Henryk, Sawicka, Marta, Skierbiszewski, Czesław (2017) Miscut dependent surface evolution in the process of N-polar GaN(0001¯) growth under N-rich condition. Journal of Crystal Growth, 457. 38-45 doi:10.1016/j.jcrysgro.2016.05.051
Plain TextKrzyżewski, Filip, Załuska-Kotur, Magdalena A., Turski, Henryk, Sawicka, Marta, Skierbiszewski, Czesław (2017) Miscut dependent surface evolution in the process of N-polar GaN(0001¯) growth under N-rich condition. Journal of Crystal Growth, 457. 38-45 doi:10.1016/j.jcrysgro.2016.05.051
In(2017) Journal of Crystal Growth Vol. 457. Elsevier BV

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Krzyżewski, Filip, Załuska-Kotur, Magdalena A. (2017) Stability diagrams for the surface patterns of GaN(0001¯) as a function of Schwoebel barrier height. Journal of Crystal Growth, 457. 80-84 doi:10.1016/j.jcrysgro.2016.04.043
ZaŁuska–Kotur, Magdalena A., Krzyżewski, Filip, Krukowski, StanisŁaw (2012) Emergence of regular meandered step structure in simulated growth of GaN(0001) surface. Journal of Crystal Growth, 343 (1). 138-144 doi:10.1016/j.jcrysgro.2012.01.033
Turski, Henryk, Krzyżewski, Filip, Feduniewicz-Żmuda, Anna, Wolny, Pawel, Siekacz, Marcin, Muziol, Grzegorz, Cheze, Caroline, Nowakowski-Szukudlarek, Krzesimir, Xing, Huili (Grace), Jena, Debdeep, Załuska-Kotur, Magdalena, Skierbiszewski, Czesław (2019) Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface. Applied Surface Science, 484. 771-780 doi:10.1016/j.apsusc.2019.04.082
Załuska-Kotur, Magdalena A., Krzyżewski, Filip, Krukowski, Stanisław (2011) Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions. Journal of Applied Physics, 109 (2). 23515pp. doi:10.1063/1.3536516
Załuska-Kotur, Magdalena A., Krzyżewski, Filip, Krukowski, Stanisław (2010) Surface patterns due to step flow anisotropy formed in crystal growth process. Journal of Non-Crystalline Solids, 356 (37) 1935-1939 doi:10.1016/j.jnoncrysol.2010.05.029
Krzyżewski, Filip, Załuska–Kotur, Magdalena A. (2014) Coexistence of bunching and meandering instability in simulated growth of 4H-SiC(0001) surface. Journal of Applied Physics, 115 (21). 213517pp. doi:10.1063/1.4881816
Turski, Henryk, Feduniewicz-Żmuda, Anna, Sawicka, Marta, Reszka, Anna, Kowalski, Bogdan, Kryśko, Marcin, Wolny, Paweł, Smalc-Koziorowska, Julita, Siekacz, Marcin, Muzioł, Grzegorz, Nowakowski-Szukudlarek, Krzesimir, Grzanka, Szymon, Skierbiszewski, Czeslaw (2019) Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE. Journal of Crystal Growth, 512. 208-212 doi:10.1016/j.jcrysgro.2019.01.034
Chabowska, Marta A.; Załuska-Kotur, Magdalena A. (2025) Engineering 2D surface patterns with the VicCa model. Journal of Crystal Growth, 667. doi:10.1016/j.jcrysgro.2025.128245
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Załuska‐Kotur, Magdalena A., Krzyżewski, Filip (2012) Step bunching process induced by the flow of steps at the sublimated crystal surface. Journal of Applied Physics, 111 (11). 114311pp. doi:10.1063/1.4728233
Sawicka, M., Chèze, C., Turski, H., Smalc-Koziorowska, J., Kryśko, M., Kret, S., Remmele, T., Albrecht, M., Cywiński, G., Grzegory, I., Skierbiszewski, C. (2013) Growth mechanisms in semipolar and nonpolar m-plane AlGaN/GaN structures grown by PAMBE under N-rich conditions. Journal of Crystal Growth, 377. 184-191 doi:10.1016/j.jcrysgro.2013.04.045
 
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