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Li, Bin, Xia, Yipu, Ho, Wingkin, Xie, Maohai (2017) Suspended Ga2Se3 film and epitaxial Bi2Se3(221) on GaSb(001) by molecular-beam epitaxy. Journal of Crystal Growth, 459. 76-80 doi:10.1016/j.jcrysgro.2016.11.057

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Reference TypeJournal (article/letter/editorial)
TitleSuspended Ga2Se3 film and epitaxial Bi2Se3(221) on GaSb(001) by molecular-beam epitaxy
JournalJournal of Crystal Growth
AuthorsLi, BinAuthor
Xia, YipuAuthor
Ho, WingkinAuthor
Xie, MaohaiAuthor
Year2017 (February)Volume459
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.11.057Search in ResearchGate
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Mindat Ref. ID2912962Long-form Identifiermindat:1:5:2912962:9
GUID0
Full ReferenceLi, Bin, Xia, Yipu, Ho, Wingkin, Xie, Maohai (2017) Suspended Ga2Se3 film and epitaxial Bi2Se3(221) on GaSb(001) by molecular-beam epitaxy. Journal of Crystal Growth, 459. 76-80 doi:10.1016/j.jcrysgro.2016.11.057
Plain TextLi, Bin, Xia, Yipu, Ho, Wingkin, Xie, Maohai (2017) Suspended Ga2Se3 film and epitaxial Bi2Se3(221) on GaSb(001) by molecular-beam epitaxy. Journal of Crystal Growth, 459. 76-80 doi:10.1016/j.jcrysgro.2016.11.057
In(2017) Journal of Crystal Growth Vol. 459. Elsevier BV


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