Reference Type | Journal (article/letter/editorial) |
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Title | Suspended Ga2Se3 film and epitaxial Bi2Se3(221) on GaSb(001) by molecular-beam epitaxy |
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Journal | Journal of Crystal Growth |
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Authors | Li, Bin | Author |
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Xia, Yipu | Author |
Ho, Wingkin | Author |
Xie, Maohai | Author |
Year | 2017 (February) | Volume | 459 |
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Publisher | Elsevier BV |
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DOI | doi:10.1016/j.jcrysgro.2016.11.057Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 2912962 | Long-form Identifier | mindat:1:5:2912962:9 |
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GUID | 0 |
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Full Reference | Li, Bin, Xia, Yipu, Ho, Wingkin, Xie, Maohai (2017) Suspended Ga2Se3 film and epitaxial Bi2Se3(221) on GaSb(001) by molecular-beam epitaxy. Journal of Crystal Growth, 459. 76-80 doi:10.1016/j.jcrysgro.2016.11.057 |
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Plain Text | Li, Bin, Xia, Yipu, Ho, Wingkin, Xie, Maohai (2017) Suspended Ga2Se3 film and epitaxial Bi2Se3(221) on GaSb(001) by molecular-beam epitaxy. Journal of Crystal Growth, 459. 76-80 doi:10.1016/j.jcrysgro.2016.11.057 |
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In | (2017) Journal of Crystal Growth Vol. 459. Elsevier BV |
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