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Luo, Jian-Shing, Lin, Wen-Tai, Chang, C.Y., Tsai, W.C. (1998) Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealing. Materials Chemistry and Physics, 54. 160-163 doi:10.1016/s0254-0584(98)00024-8

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Reference TypeJournal (article/letter/editorial)
TitleInterfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealing
JournalMaterials Chemistry and Physics
AuthorsLuo, Jian-ShingAuthor
Lin, Wen-TaiAuthor
Chang, C.Y.Author
Tsai, W.C.Author
Year1998 (July)Volume54
PublisherElsevier BV
DOIdoi:10.1016/s0254-0584(98)00024-8Search in ResearchGate
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Mindat Ref. ID3051350Long-form Identifiermindat:1:5:3051350:5
GUID0
Full ReferenceLuo, Jian-Shing, Lin, Wen-Tai, Chang, C.Y., Tsai, W.C. (1998) Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealing. Materials Chemistry and Physics, 54. 160-163 doi:10.1016/s0254-0584(98)00024-8
Plain TextLuo, Jian-Shing, Lin, Wen-Tai, Chang, C.Y., Tsai, W.C. (1998) Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealing. Materials Chemistry and Physics, 54. 160-163 doi:10.1016/s0254-0584(98)00024-8
In(1998, July) Materials Chemistry and Physics Vol. 54 (1) Elsevier BV

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Luo, Jian-Shing, Lin, Wen-Tai, Chang, C.Y., Tsai, W.C., Wang, S.J. (1997) Interfacial reactions of the Co/Si1−xGex system. Materials Chemistry and Physics, 48. 140-144 doi:10.1016/s0254-0584(97)80108-3
Luo, Jian-Shing, Lin, Wen-Tai, Chang, C.Y., Shih, P.S. (2000) Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1−x−yGexCy by vacuum annealing and pulsed KrF laser annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 169 (1). 124-128 doi:10.1016/s0168-583x(00)00028-8
Chen, Da-Ren, Luo, Jian-Shing, Lin, Wen-Tai, Chang, C. Y., Shih, P. S. (1998) Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealing. Applied Physics Letters, 73 (10). 1355-1357 doi:10.1063/1.122161
Luo, Jian-Shing, Lin, Wen-Tai, Chang, C. Y., Tsai, W. C. (1997) Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 films. Journal of Applied Physics, 82 (7). 3621-3623 doi:10.1063/1.365683
Luo, Jian-Shing, Lin, Wen-Tai, Chang, C.Y, Shih, P.S, Pan, F.M, Chang, T.C (1999) Characterization of Si1−x−yGexCy films grown by C+ implantation and subsequent pulsed laser annealing. Materials Chemistry and Physics, 60. 58-62 doi:10.1016/s0254-0584(99)00073-5
Luo, Jian-Shing, Lin, Wen-Tai, Chang, C.Y, Shih, P.S, Chang, T.C (2000) Pulsed KrF laser annealing of Mo/Si0.76Ge0.24. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 169 (1). 129-134 doi:10.1016/s0168-583x(00)00029-x
Luo, Jian-Shing, Lin, Wen-Tai, Wu, Long (1995) Epitaxial growth of Pb(Zr,Ti)O3 films on Nd1.85Ce0.15CuO4−x films by pulsed laser ablation. Materials Chemistry and Physics, 40. 202-206 doi:10.1016/0254-0584(95)01476-4
Luo, Jian‐Shing, Lin, Wen‐Tai (1996) Localized epitaxial growth of hexagonal and cubic SiC films on Si by vacuum annealing. Applied Physics Letters, 69 (7). 916-918 doi:10.1063/1.116942
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Yotsuya, Tsutom, Kusaka, Tadaoki, Kakehi, Yoshiharu, Ogawa, Soichi (1998) Optical response of LaCaMnO thin film prepared by pulsed laser deposition. Materials Chemistry and Physics, 54. 169-172 doi:10.1016/s0254-0584(98)00062-5
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