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Lin, Pei-Yen, Sermon Wu, YewChung (2003) The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films. Materials Chemistry and Physics, 80. 397-400 doi:10.1016/s0254-0584(03)00109-3

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Reference TypeJournal (article/letter/editorial)
TitleThe growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films
JournalMaterials Chemistry and Physics
AuthorsLin, Pei-YenAuthor
Sermon Wu, YewChungAuthor
Year2003 (May)Volume80
PublisherElsevier BV
DOIdoi:10.1016/s0254-0584(03)00109-3Search in ResearchGate
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Mindat Ref. ID3053071Long-form Identifiermindat:1:5:3053071:5
GUID0
Full ReferenceLin, Pei-Yen, Sermon Wu, YewChung (2003) The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films. Materials Chemistry and Physics, 80. 397-400 doi:10.1016/s0254-0584(03)00109-3
Plain TextLin, Pei-Yen, Sermon Wu, YewChung (2003) The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films. Materials Chemistry and Physics, 80. 397-400 doi:10.1016/s0254-0584(03)00109-3
In(2003, May) Materials Chemistry and Physics Vol. 80 (2) Elsevier BV

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